Author: Kevin P. Bassett
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Author: Kevin P. Bassett
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
III-V Semiconductor Materials and Devices
Author: R.J. Malik
Publisher: Elsevier
ISBN: 0444596356
Category : Technology & Engineering
Languages : en
Pages : 740
Book Description
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Publisher: Elsevier
ISBN: 0444596356
Category : Technology & Engineering
Languages : en
Pages : 740
Book Description
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
The Growth and Characterization of III-V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition
Author: Pamela Kay York
Publisher:
ISBN:
Category :
Languages : en
Pages : 268
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 268
Book Description
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 660
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 660
Book Description
Growth and Characterization of III-V Compound Semiconductor Materials for Use in Novel MODFET Structures and Related Devices
Author: Donald W. Schulte
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 228
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 228
Book Description
Growth and Characterisation of III-V Semiconductor Materials Grown Primarily by AME and PA-MBE
Author: Lucy Elizabeth Goff
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 0
Book Description
Growth and Characterization of III-V Compound Semiconductors
Author: Jeremy M. Milikow
Publisher:
ISBN:
Category :
Languages : en
Pages : 74
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 74
Book Description
Growth and Characterization of III-V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors
Author: Michael Patrick Mack
Publisher:
ISBN:
Category :
Languages : en
Pages : 252
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 252
Book Description
Growth and Characterization of Novel, III-V Semiconductor Heterostructures
Author: Douglas Collins
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
Book Description
Growth and Structural Characterisation of Novel III-V Semiconductor Materials
Author: Jacqueline Lesley Hall
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
This thesis describes the growth and characterisation of four different III-V semiconductor materials. Growth was primarily performed by molecular beam epitaxy, while characterisation, which was largely structural, was carried out mainly using X-ray difraction and atomic force microscopy. Growth of low temperature(LT)GaAs was undertaken to investigate whether a phase transition accompanies the structural transition which occurs when GaAs is grown at temperatures below ~ 150C. It was found however, that LT GaAs remains zinc-blende, albeit with a signicant degree of disorder. Migration enhanced epitaxy was subsequently used to grow LT GaAs, resulting in single crystalline GaAs at growth temperatures down to 115C. The possibility of using AlN as a source for nitrogen, in the growth of GaAs based dilute nitrides was explored. No conclusive evidence has been presented to suggest that small amounts of nitrogen were incorporated into the GaAs lattice. The potential for ScN to be used as a buffer layer/interlayer to reduce the defect density in cubic GaN (c-GaN) was investigated. It was found that ScN grows on c-GaN(0 0 1)/GaAs(0 0 1) in a (1 1 1) orientation, leading to overgrowth of GaN occurring in the hexagonal phase. If the ScN interlayer was sufficiently thin (3nm), then overgrowth of GaN was cubic, but no evidence of a reduction in stacking fault density was observed. Growth of ScN on GaAs(0 0 1) was also found to result mainly in a (1 1 1) orientation, but films were of poor quality. Growth of ScN on ScAs(0 0 1) was subsequently explored. ScN was found to grow in a (0 0 1) orientation, with both smoother surfaces and improved material quality than ScN(1 1 1). Growth of GaN atop ScN(0 0 1) was found to be c-GaN(0 0 1), but insuffcient studies have been carried out to determine the effect on material quality. During the growth of InGaN, it was found that unmounted substrates lead to large temperatures rises (100C) for In rich compositions. Modelling heat absorption due to bandgap, phonon and plasmon absorption showed that this is due primarily to the large number of free carriers and not to the narrow bandgap (wrt substrate). The preliminary doping of In0.8Ga0.2N with Mn was investigated. The amount of Mn that can be incorporated without causing a signicant reduction in film quality was found to increase with decreasing growth temperature.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
This thesis describes the growth and characterisation of four different III-V semiconductor materials. Growth was primarily performed by molecular beam epitaxy, while characterisation, which was largely structural, was carried out mainly using X-ray difraction and atomic force microscopy. Growth of low temperature(LT)GaAs was undertaken to investigate whether a phase transition accompanies the structural transition which occurs when GaAs is grown at temperatures below ~ 150C. It was found however, that LT GaAs remains zinc-blende, albeit with a signicant degree of disorder. Migration enhanced epitaxy was subsequently used to grow LT GaAs, resulting in single crystalline GaAs at growth temperatures down to 115C. The possibility of using AlN as a source for nitrogen, in the growth of GaAs based dilute nitrides was explored. No conclusive evidence has been presented to suggest that small amounts of nitrogen were incorporated into the GaAs lattice. The potential for ScN to be used as a buffer layer/interlayer to reduce the defect density in cubic GaN (c-GaN) was investigated. It was found that ScN grows on c-GaN(0 0 1)/GaAs(0 0 1) in a (1 1 1) orientation, leading to overgrowth of GaN occurring in the hexagonal phase. If the ScN interlayer was sufficiently thin (3nm), then overgrowth of GaN was cubic, but no evidence of a reduction in stacking fault density was observed. Growth of ScN on GaAs(0 0 1) was also found to result mainly in a (1 1 1) orientation, but films were of poor quality. Growth of ScN on ScAs(0 0 1) was subsequently explored. ScN was found to grow in a (0 0 1) orientation, with both smoother surfaces and improved material quality than ScN(1 1 1). Growth of GaN atop ScN(0 0 1) was found to be c-GaN(0 0 1), but insuffcient studies have been carried out to determine the effect on material quality. During the growth of InGaN, it was found that unmounted substrates lead to large temperatures rises (100C) for In rich compositions. Modelling heat absorption due to bandgap, phonon and plasmon absorption showed that this is due primarily to the large number of free carriers and not to the narrow bandgap (wrt substrate). The preliminary doping of In0.8Ga0.2N with Mn was investigated. The amount of Mn that can be incorporated without causing a signicant reduction in film quality was found to increase with decreasing growth temperature.