Growth and Characterization of Ferromagnetic LCMO and Ferroelectric PZT Thin Films PDF Download
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Author: Walter Gilmore
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 246
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Book Description
Addresses the phenomena of colossal magnetoresistance (CMR) and magnetic properties associated with the incorporation of ferromagnetic (FM) lanthanum calcium manganese oxide (LCMO) (in thin film and nanoparticle form) into Si (silicon)-based systems. Discusses the growth FM lanthanum calcium manganese oxide (LCMO) thin films by pulsed laser deposition (PLD) on Si substrates by using a high conducting barrier layer of titanium nitrogen (TiN). Uses magnesium oxygen (MgO) and strontium titanium ozone (SrTiO3) films as intermediate layers between LCMO and TiN layers in order to prevent interfacial interactions with oxygen and to achieve epitaxial growth of LCMO films. Investigates the growth, characterization, and electrical properties of ferroelectric (FE) lead zirconium titanate (PZT) thin films on Si-based systems. Embeds well-separated non-interacting LCMO nanoparticles in an insulating medium using PLD.
Author: Walter Gilmore
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 246
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Book Description
Addresses the phenomena of colossal magnetoresistance (CMR) and magnetic properties associated with the incorporation of ferromagnetic (FM) lanthanum calcium manganese oxide (LCMO) (in thin film and nanoparticle form) into Si (silicon)-based systems. Discusses the growth FM lanthanum calcium manganese oxide (LCMO) thin films by pulsed laser deposition (PLD) on Si substrates by using a high conducting barrier layer of titanium nitrogen (TiN). Uses magnesium oxygen (MgO) and strontium titanium ozone (SrTiO3) films as intermediate layers between LCMO and TiN layers in order to prevent interfacial interactions with oxygen and to achieve epitaxial growth of LCMO films. Investigates the growth, characterization, and electrical properties of ferroelectric (FE) lead zirconium titanate (PZT) thin films on Si-based systems. Embeds well-separated non-interacting LCMO nanoparticles in an insulating medium using PLD.
Author: Devajyoti Mukherjee
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.
Author: Bruce Arnold Shamus Andrien
Publisher:
ISBN:
Category :
Languages : en
Pages : 260
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Book Description
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Markys G. Cain
Publisher: Springer
ISBN: 9781402093210
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and – most importantly – relevant and applicable measurement and characterisation methods and models. In the past few years there has been a rapid development of new techniques to model and measure the variety of properties that are deemed important for applications development engineers and scientists. The book has been written by the leaders in the field and many chapters represent established measurement best practice, with a strong emphasis on application of the methods via worked examples and detailed experimental procedural descriptions. Each chapter contains numerous diagrams, images, and measurement data, all of which are fully referenced and indexed. The book is intended to occupy space in the research or technical lab, and will be a valuable and practical resource for students, materials scientists, engineers, and lab technicians.
Author: R. Ramesh
Publisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
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Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Hui Zhu
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Zohra Nazir Kayani
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659749223
Category :
Languages : en
Pages : 252
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Book Description
This project is concerned with preparation and characterization of thin films of ferromagnetic and ferroelectric materials and then their testing in devices to be used in various electronic applications. The objective of the research on ferromagnetic and ferroelectric materials is intended towards developing new materials for the memory devices so that their storage capacity can be enhanced. Ferroelectrics has ability to change mechanical energy to electrical energy and vice versa. This finds their application in transducer application. They possess high dielectric permittivity finding application in capacitors. Memory devices are not only used in computers rather these are also used in cell phones, digital watches, credit cards and digital cameras. Since the current interest in memory devices is to enhance their capacity while reducing the size, a part of the project is to look into various new materials for future memories. Apart from the ongoing research on memory devices, a lot of research was focused onto display devices as well. Since the display devices (monitors, crts) usually take up a lot of space inhibiting the overall reduction of the devices, so in the current project
Author: A. S. Bhalla
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 448
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Book Description
A collection of papers on ferroelectric thin films, materials for intelligent/smart systems and adaptive structures, and processing of thin films. Contributors discuss preparation and characteristics of thin films, materials design and properties, and sensor characteristics. The papers were original
