Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Granular Nanoelectronics
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Granular Nanoelectronics
Author: David Ferry
Publisher: Springer Science & Business Media
ISBN: 9780306438813
Category : Science
Languages : en
Pages : 616
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Publisher: Springer Science & Business Media
ISBN: 9780306438813
Category : Science
Languages : en
Pages : 616
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Nanoelectronics and Information Technology
Author: Rainer Waser
Publisher: John Wiley & Sons
ISBN: 3527409270
Category : Technology & Engineering
Languages : en
Pages : 1041
Book Description
Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.
Publisher: John Wiley & Sons
ISBN: 3527409270
Category : Technology & Engineering
Languages : en
Pages : 1041
Book Description
Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.
Lower-Dimensional Systems and Molecular Electronics
Author: Robert M. Metzger
Publisher: Springer Science & Business Media
ISBN: 1489920889
Category : Science
Languages : en
Pages : 729
Book Description
This volume represents the written account of the NATO Advanced Study Institute "Lower-Dimensional Systems and Molecular Electronics" held at Hotel Spetses, Spetses Island, Greece from 12 June to 23 June 1989. The goal of the Institute was to demonstrate the breadth of chemical and physical knowledge that has been acquired in the last 20 years in inorganic and organic crystals, polymers, and thin films, which exhibit phenomena of reduced dimensionality. The interest in these systems started in the late 1960's with lower-dimensional inorganic conductors, in the early 1970's with quasi-one-dimensional crystalline organic conductors. which by 1979 led to the first organic superconductors, and, in 1977, to the fITSt conducting polymers. The study of monolayer films (Langmuir-Blodgett films) had progressed since the 1930's, but reached a great upsurge in . the early 1980's. The pursuit of non-linear optical phenomena became increasingly popular in the early 1980's, as the attention turned from inorganic crystals to organic films and polymers. And in the last few years the term "moleculw' electronics" has gained ever-increasing acceptance, although it is used in several contexts. We now have organic superconductors with critical temperatures in excess of 10 K, conducting polymers that are soluble and processable, and used commercially; we have films of a few monolayers that have high in-plane electrical conductivity, and polymers that show great promise in photonics; we even have a few devices that function almost at the molecular level.
Publisher: Springer Science & Business Media
ISBN: 1489920889
Category : Science
Languages : en
Pages : 729
Book Description
This volume represents the written account of the NATO Advanced Study Institute "Lower-Dimensional Systems and Molecular Electronics" held at Hotel Spetses, Spetses Island, Greece from 12 June to 23 June 1989. The goal of the Institute was to demonstrate the breadth of chemical and physical knowledge that has been acquired in the last 20 years in inorganic and organic crystals, polymers, and thin films, which exhibit phenomena of reduced dimensionality. The interest in these systems started in the late 1960's with lower-dimensional inorganic conductors, in the early 1970's with quasi-one-dimensional crystalline organic conductors. which by 1979 led to the first organic superconductors, and, in 1977, to the fITSt conducting polymers. The study of monolayer films (Langmuir-Blodgett films) had progressed since the 1930's, but reached a great upsurge in . the early 1980's. The pursuit of non-linear optical phenomena became increasingly popular in the early 1980's, as the attention turned from inorganic crystals to organic films and polymers. And in the last few years the term "moleculw' electronics" has gained ever-increasing acceptance, although it is used in several contexts. We now have organic superconductors with critical temperatures in excess of 10 K, conducting polymers that are soluble and processable, and used commercially; we have films of a few monolayers that have high in-plane electrical conductivity, and polymers that show great promise in photonics; we even have a few devices that function almost at the molecular level.
Transport in Nanostructures
Author: David K. Ferry
Publisher: Cambridge University Press
ISBN: 1139480839
Category : Science
Languages : en
Pages : 671
Book Description
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Publisher: Cambridge University Press
ISBN: 1139480839
Category : Science
Languages : en
Pages : 671
Book Description
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Transport in Nanostructures
Author: David Ferry
Publisher: Cambridge University Press
ISBN: 9780521663656
Category : Science
Languages : en
Pages : 532
Book Description
A comprehensive, detailed description of the properties and behaviour of mesoscopic devices.
Publisher: Cambridge University Press
ISBN: 9780521663656
Category : Science
Languages : en
Pages : 532
Book Description
A comprehensive, detailed description of the properties and behaviour of mesoscopic devices.
Design of Arithmetic Circuits in Quantum Dot Cellular Automata Nanotechnology
Author: K. Sridharan
Publisher: Springer
ISBN: 3319166883
Category : Technology & Engineering
Languages : en
Pages : 122
Book Description
This research monograph focuses on the design of arithmetic circuits in Quantum Dot Cellular Automata (QCA). Using the fact that the 3-input majority gate is a primitive in QCA, the book sets out to discover hitherto unknown properties of majority logic in the context of arithmetic circuit designs. The pursuit for efficient adders in QCA takes two forms. One involves application of the new results in majority logic to existing adders. The second involves development of a custom adder for QCA technology. A QCA adder named as hybrid adder is proposed and it is shown that it outperforms existing multi-bit adders with respect to area and delay. The work is extended to the design of a low-complexity multiplier for signed numbers in QCA. Furthermore the book explores two aspects unique to QCA technology, namely thermal robustness and the role of interconnects. In addition, the book introduces the reader to QCA layout design and simulation using QCADesigner. Features & Benefits: This research-based book: ·Introduces the reader to Quantum Dot Cellular Automata, an emerging nanotechnology. ·Explores properties of majority logic. ·Demonstrates application of the properties to design efficient arithmetic circuits. ·Guides the reader towards layout design and simulation in QCADesigner.
Publisher: Springer
ISBN: 3319166883
Category : Technology & Engineering
Languages : en
Pages : 122
Book Description
This research monograph focuses on the design of arithmetic circuits in Quantum Dot Cellular Automata (QCA). Using the fact that the 3-input majority gate is a primitive in QCA, the book sets out to discover hitherto unknown properties of majority logic in the context of arithmetic circuit designs. The pursuit for efficient adders in QCA takes two forms. One involves application of the new results in majority logic to existing adders. The second involves development of a custom adder for QCA technology. A QCA adder named as hybrid adder is proposed and it is shown that it outperforms existing multi-bit adders with respect to area and delay. The work is extended to the design of a low-complexity multiplier for signed numbers in QCA. Furthermore the book explores two aspects unique to QCA technology, namely thermal robustness and the role of interconnects. In addition, the book introduces the reader to QCA layout design and simulation using QCADesigner. Features & Benefits: This research-based book: ·Introduces the reader to Quantum Dot Cellular Automata, an emerging nanotechnology. ·Explores properties of majority logic. ·Demonstrates application of the properties to design efficient arithmetic circuits. ·Guides the reader towards layout design and simulation in QCADesigner.
Topics In High Field Transport In Semiconductors
Author: Kevin F Brennan
Publisher: World Scientific
ISBN: 9814490733
Category : Technology & Engineering
Languages : en
Pages : 270
Book Description
This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
Publisher: World Scientific
ISBN: 9814490733
Category : Technology & Engineering
Languages : en
Pages : 270
Book Description
This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
The Universality of Physics
Author: Ramzi R. Khuri
Publisher: Springer Science & Business Media
ISBN: 1461505852
Category : Science
Languages : en
Pages : 199
Book Description
Deng Feng Wang was born February 8, 1965 in Chongqing City, China and died August 15, 1999 while swimming with friends in the Atlantic Ocean off Island Beach State Park, New Jersey. In his brief life, he was to have an influence far beyond his years. On August 12th 2000, The Deng Feng Wang Memorial Conference was held at his alma mater, Princeton University, during which Deng Feng's mentors, collaborators and friends presented scientific talks in a testimonial to his tremendous influence on their work and careers. The first part of this volume contains proceedings contributions from the conference, with plenary talks by Nobel Laureate Professor Phil Anderson of Princeton University and leading Condensed Matter Theorists Professor Piers Coleman of Rutgers University and Professor Christian Gruber of the University of Lausanne. Other talks, given by collaborators, friends and classmates testify to the great breadth of Deng Feng Wang's influence, with remarkable connections shown between seemingly unrelated areas in physics such as Condensed Matter Physics, Superconductivity, One-Dimensional Models, Statistical Physics, Mathematical Physics, Quantum Field Theory, High Energy Theory, Nuclear Magnetic Resonance, Supersymmetry, M-Theory and String Theory, in addition to such varied fields outside of physics such as Oil Drilling, Mixed Signal Circuits and Neurology. The second part of the volume consists of reprints of some of Deng Feng Wang's most important papers in the areas of Condensed Matter Physics, Statistical Physics, Magnetism, Mathematical Physics and Mathematical Finance. This volume represents a fascinating synthesis of a wide variety of topics, and ultimately points to the universality of physics and of science as a whole. As such, it represents a fitting tribute to a remarkable individual, whose tragic death will never erase his enduring influence.
Publisher: Springer Science & Business Media
ISBN: 1461505852
Category : Science
Languages : en
Pages : 199
Book Description
Deng Feng Wang was born February 8, 1965 in Chongqing City, China and died August 15, 1999 while swimming with friends in the Atlantic Ocean off Island Beach State Park, New Jersey. In his brief life, he was to have an influence far beyond his years. On August 12th 2000, The Deng Feng Wang Memorial Conference was held at his alma mater, Princeton University, during which Deng Feng's mentors, collaborators and friends presented scientific talks in a testimonial to his tremendous influence on their work and careers. The first part of this volume contains proceedings contributions from the conference, with plenary talks by Nobel Laureate Professor Phil Anderson of Princeton University and leading Condensed Matter Theorists Professor Piers Coleman of Rutgers University and Professor Christian Gruber of the University of Lausanne. Other talks, given by collaborators, friends and classmates testify to the great breadth of Deng Feng Wang's influence, with remarkable connections shown between seemingly unrelated areas in physics such as Condensed Matter Physics, Superconductivity, One-Dimensional Models, Statistical Physics, Mathematical Physics, Quantum Field Theory, High Energy Theory, Nuclear Magnetic Resonance, Supersymmetry, M-Theory and String Theory, in addition to such varied fields outside of physics such as Oil Drilling, Mixed Signal Circuits and Neurology. The second part of the volume consists of reprints of some of Deng Feng Wang's most important papers in the areas of Condensed Matter Physics, Statistical Physics, Magnetism, Mathematical Physics and Mathematical Finance. This volume represents a fascinating synthesis of a wide variety of topics, and ultimately points to the universality of physics and of science as a whole. As such, it represents a fitting tribute to a remarkable individual, whose tragic death will never erase his enduring influence.
Quantum Transport in Ultrasmall Devices
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1461519675
Category : Science
Languages : en
Pages : 542
Book Description
The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size
Publisher: Springer Science & Business Media
ISBN: 1461519675
Category : Science
Languages : en
Pages : 542
Book Description
The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size