Gettering and Defect Engineering in Semiconductor Technology XV PDF Download
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Author: J.D. Murphy
Publisher: Trans Tech Publications Ltd
ISBN: 3038262056
Category : Technology & Engineering
Languages : en
Pages : 513
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Book Description
GADEST 2013 Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Author: J.D. Murphy
Publisher: Trans Tech Publications Ltd
ISBN: 3038262056
Category : Technology & Engineering
Languages : en
Pages : 513
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Book Description
GADEST 2013 Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Author: J. D. Murphy
Publisher:
ISBN:
Category : Getters
Languages : en
Pages : 516
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Book Description
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems. Review from Book News Inc.: The proceedings for GADEST 2013 contains 84 papers on such matters as defect engineering in silicon solar cells, structural and production issues in cast silicon materials for solar cells, characterizing silicon for solar cells, intrinsic point defects in silicon, light impurities in silicon-based materials, fundamental properties and gettering of metals in silicon, extended and implantation-related defects in silicon, germanium-based devices and materials, semiconductors other than silicon and germanium, and nanostructures and new materials systems.
Author: Martin Kittler
Publisher: Scitec Publications
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 634
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Book Description
Author: H. Richter
Publisher:
ISBN:
Category : Electric engineering
Languages : en
Pages : 718
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 844
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Book Description
Author: Alan Owens
Publisher: CRC Press
ISBN: 1351629166
Category : Science
Languages : en
Pages : 786
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Book Description
Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material
Author: Victor A. Perevostchikov
Publisher: Springer Science & Business Media
ISBN: 9783540262442
Category : Science
Languages : en
Pages : 412
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Book Description
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Author: S. Ashok
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1176
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Book Description
Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
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Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Author: Dieter K. Schroder
Publisher: The Electrochemical Society
ISBN: 1566775698
Category : Semiconductors
Languages : en
Pages : 406
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Book Description
Diagnostic characterization techniques for semiconductor materials, devices and device processing are addressed at this symposium. It will cover new techniques as well as advances in routine analytical technology applied to semiconductor process development and manufacture. The hardcover edition includes a CD-ROM of ECS Transactions, Volume 10, Issue 1, Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007). The PDF edition also includes the ALTECH 2007 papers.
