Author: Hans Richter
Publisher: Trans Tech Publications Ltd
ISBN: 3035707243
Category : Technology & Engineering
Languages : en
Pages : 704
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Gettering and Defect Engineering in Semiconductor Technology X
Gettering and Defect Engineering in Semiconductor Technology X
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 704
Book Description
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics. The book comprises 20 invited and 76 contributed papers from over 90 research institutions and from more than 20 countries. The invited papers, contributed by internationally recognized experts, review the state-of-the-art and expected future trends in their respective research fields. The book is organized into 11 sections: Advanced Silicon Materials; Oxygen-, Nitrogen- and Hydrogen-Related Phenomena; Crystalline Silicon for Solar Cells; Silicon-Germanium on Silicon; Extended Defects in Silicon and their Influence on Luminescence; Implantation-Related Phenomena; Point Defects, Impurities and Deep Levels; Dislocations in Semiconductors; Diagnostics, Characterization Techniques; Gettering; Future Aspects.
Publisher:
ISBN:
Category :
Languages : en
Pages : 704
Book Description
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics. The book comprises 20 invited and 76 contributed papers from over 90 research institutions and from more than 20 countries. The invited papers, contributed by internationally recognized experts, review the state-of-the-art and expected future trends in their respective research fields. The book is organized into 11 sections: Advanced Silicon Materials; Oxygen-, Nitrogen- and Hydrogen-Related Phenomena; Crystalline Silicon for Solar Cells; Silicon-Germanium on Silicon; Extended Defects in Silicon and their Influence on Luminescence; Implantation-Related Phenomena; Point Defects, Impurities and Deep Levels; Dislocations in Semiconductors; Diagnostics, Characterization Techniques; Gettering; Future Aspects.
Gettering and Defect Engineering in Semiconductor Technology XVI
Author: Peter Pichler
Publisher: Trans Tech Publications Ltd
ISBN: 3035700834
Category : Technology & Engineering
Languages : en
Pages : 500
Book Description
Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany. The 7 1 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Publisher: Trans Tech Publications Ltd
ISBN: 3035700834
Category : Technology & Engineering
Languages : en
Pages : 500
Book Description
Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany. The 7 1 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Gettering and Defect Engineering in Semiconductor Technology XV
Author: J.D. Murphy
Publisher: Trans Tech Publications Ltd
ISBN: 3038262056
Category : Technology & Engineering
Languages : en
Pages : 520
Book Description
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Publisher: Trans Tech Publications Ltd
ISBN: 3038262056
Category : Technology & Engineering
Languages : en
Pages : 520
Book Description
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Gettering and Defect Engineering in Semiconductor Technology XIV
Author: W. Jantsch
Publisher: Trans Tech Publications Ltd
ISBN: 3038135151
Category : Technology & Engineering
Languages : en
Pages : 516
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of Gettering and Defect Engineering in Semiconductor Technology, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
Publisher: Trans Tech Publications Ltd
ISBN: 3038135151
Category : Technology & Engineering
Languages : en
Pages : 516
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of Gettering and Defect Engineering in Semiconductor Technology, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
Gettering and Defect Engineering in Semiconductor Technology
Author: Hermann G. Grimmeiss
Publisher: Trans Tech Publications Ltd
ISBN: 3035706506
Category : Technology & Engineering
Languages : en
Pages : 650
Book Description
Solid State Phenomena Vols. 32-33
Publisher: Trans Tech Publications Ltd
ISBN: 3035706506
Category : Technology & Engineering
Languages : en
Pages : 650
Book Description
Solid State Phenomena Vols. 32-33
Gettering and Defect Engineering in Semiconductor Technology XII
Author: Anna Cavallini
Publisher: Trans Tech Publications Ltd
ISBN: 3038131946
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Publisher: Trans Tech Publications Ltd
ISBN: 3038131946
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Gettering and Defect Engineering in Semiconductor Technology XI
Author: Bernard Pichaud
Publisher: Trans Tech Publications Ltd
ISBN: 303813029X
Category : Technology & Engineering
Languages : en
Pages : 830
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Publisher: Trans Tech Publications Ltd
ISBN: 303813029X
Category : Technology & Engineering
Languages : en
Pages : 830
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Gettering and Defect Engineering in Semiconductor Technology VII
Author: Cor Claeys
Publisher: Trans Tech Publications Ltd
ISBN: 3035706719
Category : Technology & Engineering
Languages : en
Pages : 556
Book Description
Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.
Publisher: Trans Tech Publications Ltd
ISBN: 3035706719
Category : Technology & Engineering
Languages : en
Pages : 556
Book Description
Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.
Gettering and Defect Engineering in Semiconductor Technology IX
Author: Vito Raineri
Publisher: Trans Tech Publications Ltd
ISBN: 3035707073
Category : Technology & Engineering
Languages : en
Pages : 850
Book Description
Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. Volume is indexed by Thomson Reuters CPCI-S (WoS). The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.
Publisher: Trans Tech Publications Ltd
ISBN: 3035707073
Category : Technology & Engineering
Languages : en
Pages : 850
Book Description
Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. Volume is indexed by Thomson Reuters CPCI-S (WoS). The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.