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Author: Milan Pesic
Publisher: BoD – Books on Demand
ISBN: 3744867889
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Author: Milan Pesic
Publisher: BoD – Books on Demand
ISBN: 3744867889
Category : Technology & Engineering
Languages : en
Pages : 154
Get Book Here
Book Description
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author:
Publisher: Elsevier
ISBN: 0443193916
Category : Science
Languages : en
Pages : 186
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Book Description
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. - 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate - The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this - Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Author: Shimeng Yu
Publisher: Springer Nature
ISBN: 3031020308
Category : Technology & Engineering
Languages : en
Pages : 71
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Book Description
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Rajesh Singh
Publisher: CRC Press
ISBN: 1000404897
Category : Technology & Engineering
Languages : en
Pages : 636
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Book Description
ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society. This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering.
Author: Charles Ching-hsiang Hsu
Publisher: World Scientific
ISBN: 9814460923
Category : Technology & Engineering
Languages : en
Pages : 319
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Book Description
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Roberto Gastaldi
Publisher: Springer
ISBN: 3319477242
Category : Technology & Engineering
Languages : en
Pages : 261
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Book Description
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.
