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Author:
Publisher:
ISBN:
Category : Electric leakage
Languages : en
Pages : 296
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Book Description
Author:
Publisher:
ISBN:
Category : Electric leakage
Languages : en
Pages : 296
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Book Description
Author: L. A. Clevenger
Publisher: Cambridge University Press
ISBN: 9781107413160
Category : Technology & Engineering
Languages : en
Pages : 254
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Book Description
As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.
Author: S. A. Campbell
Publisher: Cambridge University Press
ISBN: 9781107412194
Category : Technology & Engineering
Languages : en
Pages : 290
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Book Description
As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.
Author: S. A. Campbell
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 296
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2002.
Author: Michel Houssa
Publisher: CRC Press
ISBN: 1000687244
Category : Science
Languages : en
Pages : 460
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Book Description
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 3540264620
Category : Technology & Engineering
Languages : en
Pages : 723
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Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566772747
Category : Technology & Engineering
Languages : en
Pages : 482
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Book Description
The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
![Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII PDF](https://books.google.com/books/content/images/frontcover/wUnw2OLLYf4C?fife=w80-h100)
Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 9781566774598
Category : Nature
Languages : en
Pages : 606
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Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
ISBN: 1402030789
Category : Science
Languages : en
Pages : 477
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Book Description
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Author: Janice L. Veteran
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 704
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
