Author: Yee-Chia Yeo
Publisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
Gate-stack and Channel Engineering for Advanced CMOS Technology
Author: Yee-Chia Yeo
Publisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS
Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Author: P. J. Timans
Publisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488
Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Publisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488
Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
Author: E. P. Gusev
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426
Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426
Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
Author: V. Narayanan
Publisher: The Electrochemical Society
ISBN: 1566777097
Category : Gate array circuits
Languages : en
Pages : 367
Book Description
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Publisher: The Electrochemical Society
ISBN: 1566777097
Category : Gate array circuits
Languages : en
Pages : 367
Book Description
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 1566775027
Category : Gate array circuits
Languages : en
Pages : 472
Book Description
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Publisher: The Electrochemical Society
ISBN: 1566775027
Category : Gate array circuits
Languages : en
Pages : 472
Book Description
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stacks for High-Mobility Semiconductors
Author: Athanasios Dimoulas
Publisher: Springer Science & Business Media
ISBN: 354071491X
Category : Technology & Engineering
Languages : en
Pages : 397
Book Description
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Publisher: Springer Science & Business Media
ISBN: 354071491X
Category : Technology & Engineering
Languages : en
Pages : 397
Book Description
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment
Author: E. P. Gusev
Publisher:
ISBN: 9781607681410
Category :
Languages : en
Pages : 412
Book Description
Publisher:
ISBN: 9781607681410
Category :
Languages : en
Pages : 412
Book Description
Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations
Author: Qiang Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description
Gate-stack for Sub-50nm CMOS Devices
Author: Igor Polishchuk
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description