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Author: B. Jayant Baliga
Publisher: William Andrew
ISBN: 1455731536
Category : Technology & Engineering
Languages : en
Pages : 733
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Book Description
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Author: B. Jayant Baliga
Publisher: William Andrew
ISBN: 1455731536
Category : Technology & Engineering
Languages : en
Pages : 733
Get Book Here
Book Description
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Author: SATYAM SIR
Publisher: physicsfactor.com
ISBN:
Category : Education
Languages : en
Pages : 85
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Book Description
Learn Semiconductors which is divided into various sub topics. Each topic has plenty of problems in an adaptive difficulty wise. From basic to advanced level with gradual increment in the level of difficulty. The set of problems on any topic almost covers all varieties of physics problems related to the chapter Semiconductors. If you are preparing for IIT JEE Mains and Advanced or NEET or CBSE Exams, this Physics eBook will really help you to master this chapter completely in all aspects. It is a Collection of Adaptive Physics Problems in Semiconductors for SAT Physics, AP Physics, 11 Grade Physics, IIT JEE Mains and Advanced , NEET & Olympiad Level Book Series Volume 31 This Physics eBook will cover following Topics for Semiconductors: 1. Band Theory 2. Types of Semiconductors 3. Electrical Conductivity 4. Junction Diode 5. Diode Circuits 6. V-I Characteristics 7. Zener Diode 8. Rectifiers 9. Transistors 10. Logic Gates 11. Chapter Test The intention is to create this book to present physics as a most systematic approach to develop a good numerical solving skill. About Author Satyam Sir has graduated from IIT Kharagpur in Civil Engineering and has been teaching Physics for JEE Mains and Advanced for more than 8 years. He has mentored over ten thousand students and continues mentoring in regular classroom coaching. The students from his class have made into IIT institutions including ranks in top 100. The main goal of this book is to enhance problem solving ability in students. Sir is having hope that you would enjoy this journey of learning physics! In case of query, visit www.physicsfactor.com or WhatsApp to our customer care number +91 7618717227
Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
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Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 3540264620
Category : Technology & Engineering
Languages : en
Pages : 723
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Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
Author: Chia-Hung Hsieh
Publisher: BoD – Books on Demand
ISBN: 9533078243
Category : Medical
Languages : en
Pages : 350
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Book Description
This book's stated purpose is to provide a discussion of the technical basis and clinical applications of positron emission tomography (PET), as well as their recent progress in nuclear medicine. It also summarizes current literature about research and clinical science in PET. The book is divided into two broad sections: basic science and clinical science. The basic science section examines PET imaging processing, kinetic modeling, free software, and radiopharmaceuticals. The clinical science section demonstrates various clinical applications and diagnoses. The text is intended not only for scientists, but also for all clinicians seeking recent information regarding PET.
Author: Yoshio Nishi
Publisher: CRC Press
ISBN: 1420017667
Category : Technology & Engineering
Languages : en
Pages : 1722
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Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Author: SATYAM SIR
Publisher: physicsfactor.com
ISBN:
Category : Education
Languages : en
Pages : 695
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Book Description
This physics book volume 02 contain 10 chapters. 11. Electrostatics 12. Electricity 13. Magnetics 14. Magnetism 15. Electromagnetic Induction 16. Alternating Current 17. Electromagnetic Waves 18. Ray Optics 19. Wave Optics 20. Modern Physics Each chapter is divided into several subtopics, where it has levelwise easy, medium and difficult problems on every subtopic. It is a collection of more than 300 Physics Problems for IIT JEE Mains and JEE Advanced, NEET, CBSE Boards, NCERT Book, AP Physics, SAT Physics & Olympiad Level questions. Key Features of this book: Sub-topic wise Questions with detailed Solutions Each Topic has Level -1, Level-2, Level-3 Questions Chapter wise Test with Level -1, Level-2, Level-3 Difficulty More than 300 Questions from Each Chapter About Author Satyam Sir has graduated from IIT Kharagpur in Civil Engineering and has been teaching Physics for JEE Mains and Advanced for more than 8 years. He has mentored over ten thousand students and continues mentoring in regular classroom coaching. The students from his class have made into IIT institutions including ranks in top 100. The main goal of this book is to enhance problem solving ability in students. Sir is having hope that you would enjoy this journey of learning physics! In case of query, visit www.physicsfactor.com or whatsapp to our customer care number +91 6361109416
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Surekha Tomar
Publisher: Upkar Prakashan
ISBN: 8174821376
Category :
Languages : en
Pages : 1152
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Book Description
Author: Souvik Mahapatra
Publisher: Springer
ISBN: 8132225082
Category : Technology & Engineering
Languages : en
Pages : 282
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Book Description
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
