GaN heterostructure field effect transistors PDF Download
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Languages : en
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A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.
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Category :
Languages : en
Pages :
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Book Description
A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.
Author: Andrew Taiann Ping
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ISBN:
Category :
Languages : en
Pages : 202
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Author: Yang-An Tan
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Category : Microwave devices
Languages : en
Pages : 138
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Author: Daniel Balaz
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Category : Electronic apparatus and appliances
Languages : en
Pages : 157
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Author: Mirza Arif Baig
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Category :
Languages : en
Pages : 200
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Author: Wei San Tan
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Category :
Languages : en
Pages :
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Author: Sanghyun Seo
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ISBN: 9783832282820
Category :
Languages : en
Pages : 165
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Category :
Languages : en
Pages : 0
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Author:
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Category :
Languages : en
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Book Description
A brief overview of materials. Processing, technologies, and performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) are presented. Sate-of-the-art results on the dc, microwave, power, and noise characteristics of these devices on sapphire and SiC substrates are discussed. It is evident that AlGaN/GaN HFETs will be used for high power applications at microwave frequencies in the future. It is also possible that these devices will find applications for low noise amplifiers.
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Languages : en
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