GaN and Related Alloys - 2003: PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download GaN and Related Alloys - 2003: PDF full book. Access full book title GaN and Related Alloys - 2003: by Hock Min Ng. Download full books in PDF and EPUB format.
Author: Hock Min Ng
Publisher: Cambridge University Press
ISBN: 9781107409286
Category : Technology & Engineering
Languages : en
Pages : 862
Get Book Here
Book Description
This book, first published in 2004, focuses on both the fundamental issues in materials science as well as the technology of photonic, electronic and sensor applications utilizing gallium nitride (GaN) and related alloys. With contributions from 28 countries spanning 5 continents, it is evident that the field is vibrant and growing rapidly. Current and emerging research areas are addressed - epitaxial growth strategies for high-indium-content InGaN alloys, InGaAlN alloys, and dilute nitride alloys; increasing the p-type doping levels in GaN and AlGaN alloys; developing large-area GaN and AlN substrates; controlling and understanding the influence of defects and polarization; device processing techniques; and developing new applications for III-nitrides.
Author: Hock Min Ng
Publisher: Cambridge University Press
ISBN: 9781107409286
Category : Technology & Engineering
Languages : en
Pages : 862
Get Book Here
Book Description
This book, first published in 2004, focuses on both the fundamental issues in materials science as well as the technology of photonic, electronic and sensor applications utilizing gallium nitride (GaN) and related alloys. With contributions from 28 countries spanning 5 continents, it is evident that the field is vibrant and growing rapidly. Current and emerging research areas are addressed - epitaxial growth strategies for high-indium-content InGaN alloys, InGaAlN alloys, and dilute nitride alloys; increasing the p-type doping levels in GaN and AlGaN alloys; developing large-area GaN and AlN substrates; controlling and understanding the influence of defects and polarization; device processing techniques; and developing new applications for III-nitrides.
Author: Hock Min Ng
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 872
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author:
Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 872
Get Book Here
Book Description
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 900
Get Book Here
Book Description
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Author: S. J. Pearton
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1056
Get Book Here
Book Description
This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Mathias Schubert
Publisher: Springer Science & Business Media
ISBN: 9783540232490
Category : Science
Languages : en
Pages : 216
Get Book Here
Book Description
The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.
Author: Thomas H. Myers
Publisher: Cambridge University Press
ISBN: 9781107413290
Category : Technology & Engineering
Languages : en
Pages : 1052
Get Book Here
Book Description
This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: John E. Northrup
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 912
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
