GaN and Related Alloys - 1999: Volume 595 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download GaN and Related Alloys - 1999: Volume 595 PDF full book. Access full book title GaN and Related Alloys - 1999: Volume 595 by Thomas H. Myers. Download full books in PDF and EPUB format.
Author: Thomas H. Myers
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1070
Get Book Here
Book Description
This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Author: Thomas H. Myers
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1070
Get Book Here
Book Description
This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Author: Michael Shur
Publisher: World Scientific
ISBN: 9812388443
Category : Technology & Engineering
Languages : en
Pages : 295
Get Book Here
Book Description
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Author:
Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 872
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 624
Get Book Here
Book Description
Author: R. F. Kopf
Publisher: The Electrochemical Society
ISBN: 9781566772662
Category : Technology & Engineering
Languages : en
Pages : 368
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Infrared detectors
Languages : en
Pages : 570
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Glass waste
Languages : en
Pages : 800
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 576
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 608
Get Book Here
Book Description
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Get Book Here
Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
