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Author: Stephen Pearton
Publisher: Elsevier
ISBN: 0128145226
Category : Technology & Engineering
Languages : en
Pages : 510
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Book Description
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
Author: Stephen Pearton
Publisher: Elsevier
ISBN: 0128145226
Category : Technology & Engineering
Languages : en
Pages : 510
Get Book Here
Book Description
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
Author: Masataka Higashiwaki
Publisher: Springer Nature
ISBN: 3030371530
Category : Technology & Engineering
Languages : en
Pages : 768
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Book Description
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Author: Perrin Walker
Publisher: CRC Press
ISBN: 9781439822531
Category : Science
Languages : en
Pages : 1434
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Book Description
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
Author: Trupti Ranjan Lenka
Publisher: Bentham Science Publishers
ISBN: 9815238256
Category : Technology & Engineering
Languages : en
Pages : 358
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Book Description
Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Author: D.L. Grigsby
Publisher: Springer Science & Business Media
ISBN: 1475708424
Category : Technology & Engineering
Languages : en
Pages : 1816
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Book Description
Author: Shunpei Yamazaki
Publisher: John Wiley & Sons
ISBN: 1119247349
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
Author: Eula Bingham
Publisher: John Wiley & Sons
ISBN: 0470410817
Category : Science
Languages : en
Pages : 5872
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Book Description
Featuring the improved format used in the 5th edition, this updated set presents, in logical groupings, comprehensive toxicological data for industrial compounds, including CAS numbers, physical and chemical properties, exposure limits, and biological tolerance values for occupational exposures, making it essential for toxicologists and industrial hygienists. This edition has about 40% new authors who have brought a new and international perspective to interpreting industrial toxicology, and discusses new subjects such as nanotechnology, flavorings and the food industry, reactive chemical control to comprehensive chemical policy, metalworking fluids, and pharmaceuticals.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 116
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Book Description
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Chemistry, Physical and theoretical
Languages : en
Pages : 812
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Book Description
Author: Joseph Désiré Hubert Donnay
Publisher:
ISBN:
Category : Crystallography
Languages : en
Pages : 1328
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Book Description
