Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide PDF Download
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Author: Robert F. Davis
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ISBN:
Category :
Languages : en
Pages : 26
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Semiconductor quality beta-SiC thin films are currently being grown for future microelectric applications using CVD techniques. Research in this period has included initial ion implantation studies coupled with annealing and ion microprobe analyses of the resulting implant profiles. An indepth study of the converted layer formed by the reaction of C2H4 with the Si substrate is also included in this report. (Author).
Author: Robert F. Davis
Publisher:
ISBN:
Category :
Languages : en
Pages : 26
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Book Description
Semiconductor quality beta-SiC thin films are currently being grown for future microelectric applications using CVD techniques. Research in this period has included initial ion implantation studies coupled with annealing and ion microprobe analyses of the resulting implant profiles. An indepth study of the converted layer formed by the reaction of C2H4 with the Si substrate is also included in this report. (Author).
Author: Robert F. Davis
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
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The research of this reporting period has involved (1) the chemical vapor deposition (CVD) of Beta-silicon carbide on off-axis silicon (100), (2) the growth of Beta- and alpha-SiC on monocrystalline alpha-SiC substrates, (3) high temperature ion implantation, and damage production studies, (4) the continued development of contacts for n- and p-type SiC, (5) reactive ion and plasma etching, and (6) the fabrication and evaluation of MESFETs and MOSFETs in Bet-SiC. Keywords: Doping; Aluminum nitride; Electron microscopy; Secondary ion mass spectroscopy; Rutherford back-scattering.
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Category : Aeronautics
Languages : en
Pages : 836
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Category : Power resources
Languages : en
Pages : 536
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Author: Hyeong Joon Kim
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Category :
Languages : en
Pages :
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Author: Charles Edward Ryan
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Category : Chlorine compounds
Languages : en
Pages : 28
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The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
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Category : Power resources
Languages : en
Pages : 632
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Includes all works deriving from DOE, other related government-sponsored information and foreign nonnuclear information.
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Category : Ceramics
Languages : en
Pages : 92
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Author: Hyeong Joon Kim
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Category :
Languages : en
Pages : 544
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Author: Hyeong Joon Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 272
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