Floating Substrate Process. First Quarterly Progress Report, January 6, 1976--March 28, 1976 PDF Download

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Laboratory apparatus has been designed, built, and put into operation to study the supercooling of Sn--Si melts and the uptake of silicon from silanes. Values of supercooling of Sn--Si melts as high as 78°C at 1100°C and 39°C at 1200°C have been observed. Results to date have been limited by nucleation caused by foreign material floating on the surface of the melt. Spontaneously nucleated planar platelet growth has been observed at the Sn--Si supercooled surface having growth rates of approximately 0.5 cm/min. Homogeneous nucleation of silane decomposition has been studied at 1015°C and 1135°C. The flow rates of HCl required to suppress gas phase decomposition have been determined for silane flow rates up to 4.5 x 10−3 mole/min. Initial silicon uptake experiments have shown that at least 20 percent of the incoming silicon contained in a flowing silane gas stream can be incorporated into liquid tin at 1040°C.