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Author: Jalil Boukhobza
Publisher: Elsevier
ISBN: 008101158X
Category : Technology & Engineering
Languages : en
Pages : 268
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Book Description
4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020 and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new era of data deluge. Data has become a major economic and social challenge. The speed of processing of these data is the weakest link in a computer system: the storage system. It is therefore crucial to optimize this operation. During the last decade, storage systems have experienced a major revolution: the advent of flash memory. Flash Memory Integration: Performance and Energy Issues contributes to a better understanding of these revolutions. The authors offer us an insight into the integration of flash memory in computer systems, their behavior in performance and in power consumption compared to traditional storage systems. The book also presents, in their entirety, various methods for measuring the performance and energy consumption of storage systems for embedded as well as desktop/server computer systems. We are invited on a journey to the memories of the future. - Ideal for computer scientists, featuring low level details to concentrate on system issues - Tackles flash memory aspects while spanning domains such as embedded systems and HPC - Contains an exhaustive set of experimental results conducted in the Lab-STICC laboratory - Provides details on methodologies to perform performance and energy measurements on flash storage systems
Author: Jalil Boukhobza
Publisher: Elsevier
ISBN: 008101158X
Category : Technology & Engineering
Languages : en
Pages : 268
Get Book Here
Book Description
4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020 and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new era of data deluge. Data has become a major economic and social challenge. The speed of processing of these data is the weakest link in a computer system: the storage system. It is therefore crucial to optimize this operation. During the last decade, storage systems have experienced a major revolution: the advent of flash memory. Flash Memory Integration: Performance and Energy Issues contributes to a better understanding of these revolutions. The authors offer us an insight into the integration of flash memory in computer systems, their behavior in performance and in power consumption compared to traditional storage systems. The book also presents, in their entirety, various methods for measuring the performance and energy consumption of storage systems for embedded as well as desktop/server computer systems. We are invited on a journey to the memories of the future. - Ideal for computer scientists, featuring low level details to concentrate on system issues - Tackles flash memory aspects while spanning domains such as embedded systems and HPC - Contains an exhaustive set of experimental results conducted in the Lab-STICC laboratory - Provides details on methodologies to perform performance and energy measurements on flash storage systems
Author: Rino Micheloni
Publisher: Springer
ISBN: 9401775125
Category : Computers
Languages : en
Pages : 391
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Book Description
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
Author: Paulo Cappelletti
Publisher: Springer Science & Business Media
ISBN: 1461550157
Category : Technology & Engineering
Languages : en
Pages : 544
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Book Description
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Author: Yangyuan Wang
Publisher: Springer Nature
ISBN: 9819928362
Category : Technology & Engineering
Languages : en
Pages : 2006
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Book Description
Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.
Author: Cristian Zambelli
Publisher: Mdpi AG
ISBN: 9783036530123
Category : Technology & Engineering
Languages : en
Pages : 144
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Book Description
Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today "3D" means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.
Author: Thomas M. Coughlin
Publisher: Newnes
ISBN: 0080558496
Category : Technology & Engineering
Languages : en
Pages : 311
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Book Description
Can you imagine life without your cell phone, laptop, digital camera, iPod, BlackBerry, flat-screen TV, or DVD player? The skyrocketing demand for devices that provide simple, immediate access to large amounts of content is driving required digital storage capacity to unprecedented levels. Designing digital storage into consumer electronics is crucial to the performance and cost of these devices. However, as our requirements for digital content storage grow, so does the formidable difficulty of implementing design solutions that are rugged, long-lasting, power-miserly, secure, network-accessible and can still fit in the palm of your hand!This book provides the background necessary to understand common digital storage devices and media. It helps readers decide which methods of storage work best for which kinds of devices, and then teaches designers how to successfully integrate them into consumer products. - Presents best practices for selecting, integrating, and using storage devices to achieve higher performance, greater reliability and lower cost - Teardown photos provide rare visuals of the "guts" of the devices discussed - Covers hot topics including flash memory, DVRs, Apple iPods, home networks, and automotive electronics, from basic layouts to standards, advanced features, and exciting growth opportunities
Author: Kyriazis, Dimosthenis
Publisher: IGI Global
ISBN: 1466639350
Category : Computers
Languages : en
Pages : 342
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Book Description
With the evolution of digitized data, our society has become dependent on services to extract valuable information and enhance decision making by individuals, businesses, and government in all aspects of life. Therefore, emerging cloud-based infrastructures for storage have been widely thought of as the next generation solution for the reliance on data increases. Data Intensive Storage Services for Cloud Environments provides an overview of the current and potential approaches towards data storage services and its relationship to cloud environments. This reference source brings together research on storage technologies in cloud environments and various disciplines useful for both professionals and researchers.
Author: Arup Bhattacharyya
Publisher: CRC Press
ISBN: 1351798324
Category : Technology & Engineering
Languages : en
Pages : 545
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Book Description
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author: Robert Puers
Publisher: John Wiley & Sons
ISBN: 352734053X
Category : Technology & Engineering
Languages : en
Pages : 694
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Book Description
Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.
Author: Aldo Araujo Fonseca
Publisher: IBM Redbooks
ISBN: 0738459666
Category : Computers
Languages : en
Pages : 68
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Book Description
This IBM® Redbooks® Product Guide publication describes the IBM FlashSystem® 5200 solution, which is a next-generation IBM FlashSystem control enclosure. It is an NVMe end-to-end platform that is targeted at the entry and midrange market and delivers the full capabilities of IBM FlashCore® technology. It also provides a rich set of software-defined storage (SDS) features that are delivered by IBM Spectrum® Virtualize, including the following features: Data reduction and deduplication Dynamic tiering Thin provisioning Snapshots Cloning Replication Data copy services Transparent Cloud Tiering IBM HyperSwap® including 3-site replication for high availability (HA) Scale-out and scale-up configurations further enhance capacity and throughput for better availability. The IBM FlashSystem 5200 is a high-performance storage solution that is based on a revolutionary 1U form factor. It consists of 12 NVMe Flash Devices in a 1U storage enclosure drawer with full redundant canister components and no single point of failure. It is designed for businesses of all sizes, including small, remote, branch offices and regional clients. It is a smarter, self-optimizing solution that requires less management, which enables organizations to overcome their storage challenges. Flash has come of age and price point reductions mean that lower parts of the storage market are seeing the value of moving over to flash and NVMe--based solutions. The IBM FlashSystem 5200 advances this transition by providing incredibly dense tiers of flash in a more affordable package. With the benefit of IBM FlashCore Module compression and new QLC flash-based technology becoming available, a compelling argument exists to move away from Nearline SAS storage and on to NVMe. With the release of IBM FlashSystem 5200 Software V8.4, extra functions and features are available, including support for new Distributed RAID1 (DRAID1) features, GUI enhancements, Redirect-on-write for Data Reduction Pool (DRP) snapshots, and 3-site replication capabilities. This book is aimed at pre-sales and post-sales technical support and marketing and storage administrators.
