First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes PDF full book. Access full book title First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes by Michele Moresco. Download full books in PDF and EPUB format.
Author: Michele Moresco
Publisher:
ISBN:
Category :
Languages : en
Pages : 250
Get Book Here
Book Description
Abstract: The objective of this thesis work is twofold: to present a theoretical framework to study high-field carrier transport in semiconductor materials and to provide a deep understanding of the transport properties of GaN and HgCdTe. The validation of this model is performed by applying it to the study of Avalanche Photodiodes. The model we developed is based on Monte Carlo techniques and it includes the full details of the band structure, derived from the empirical pseudopotential method (EPM), and a numerically calculated impact ionization transition rate based on a wave-vector dependent dielectric function. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion (RPI) approximation using ab initio techniques to determine the phonon dispersion relation. The calculated phonon scattering rates are consistent with the electronic structure and the phonon dispersion relation thus removing adjustable parameters such as deformation potential coefficients. Band-to-band carrier tunneling has been treated by solving the time-dependent multiband Schroedinger equation. The multiband description predicts a considerable increase of the impact ionization coefficients compared with simulations not considering tunneling. Specifically, the present model has been applied to the study of two distinct semiconductor materials: GaN and HgCdTe. The former is a wide bandgap while the second is a narrow bandgap semiconductor. In spite of their constantly increasing technological reliability both materials lack theoretical understanding of high-field carrier transport. Avalanche photodiodes (APDs) offer an ideal environment to test and validate the model developed in this thesis work because of the large electric field involved in these devices. APDs based on both GaN and HgCdTe are investigated, consistently with the physics-based models described above. Key quantities such as gain, breakdown voltage, bandwidth and noise characteristics are estimated. The results are found to be in good agreement with experimental data available in literature.
Author: Michele Moresco
Publisher:
ISBN:
Category :
Languages : en
Pages : 250
Get Book Here
Book Description
Abstract: The objective of this thesis work is twofold: to present a theoretical framework to study high-field carrier transport in semiconductor materials and to provide a deep understanding of the transport properties of GaN and HgCdTe. The validation of this model is performed by applying it to the study of Avalanche Photodiodes. The model we developed is based on Monte Carlo techniques and it includes the full details of the band structure, derived from the empirical pseudopotential method (EPM), and a numerically calculated impact ionization transition rate based on a wave-vector dependent dielectric function. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion (RPI) approximation using ab initio techniques to determine the phonon dispersion relation. The calculated phonon scattering rates are consistent with the electronic structure and the phonon dispersion relation thus removing adjustable parameters such as deformation potential coefficients. Band-to-band carrier tunneling has been treated by solving the time-dependent multiband Schroedinger equation. The multiband description predicts a considerable increase of the impact ionization coefficients compared with simulations not considering tunneling. Specifically, the present model has been applied to the study of two distinct semiconductor materials: GaN and HgCdTe. The former is a wide bandgap while the second is a narrow bandgap semiconductor. In spite of their constantly increasing technological reliability both materials lack theoretical understanding of high-field carrier transport. Avalanche photodiodes (APDs) offer an ideal environment to test and validate the model developed in this thesis work because of the large electric field involved in these devices. APDs based on both GaN and HgCdTe are investigated, consistently with the physics-based models described above. Key quantities such as gain, breakdown voltage, bandwidth and noise characteristics are estimated. The results are found to be in good agreement with experimental data available in literature.
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1468436384
Category : Technology & Engineering
Languages : en
Pages : 620
Get Book Here
Book Description
The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
Author: Pedro Derosa
Publisher: CRC Press
ISBN: 1439810400
Category : Science
Languages : en
Pages : 310
Get Book Here
Book Description
While the relevant features and properties of nanosystems necessarily depend on nanoscopic details, their performance resides in the macroscopic world. To rationally develop and accurately predict performance of these systems we must tackle problems where multiple length and time scales are coupled. Rather than forcing a single modeling approach to
Author: N. Balkan
Publisher: Springer Science & Business Media
ISBN: 1461528224
Category : Technology & Engineering
Languages : en
Pages : 437
Get Book Here
Book Description
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.
Author: Michael E Levinshtein
Publisher: World Scientific
ISBN: 9814479926
Category : Technology & Engineering
Languages : en
Pages : 223
Get Book Here
Book Description
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Author: Chandramouli Venkataramani
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 292
Get Book Here
Book Description
Author: Hisashi Shichijo
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 328
Get Book Here
Book Description
Two theoretical aspects of high field transport in III-V semiconductors have been studied. First, a new mechanism to obtain negative differential resistance in a GaAs-AlGaAs multilayered structure is described. The mechanism is based on the transfer of electrons in real space from a high mobility GaAs region to an adjacent low mobility AlGaAs region when a high electric field is applied parallel to the interface. It is analogous in many respects to the Gunn effect, except that this mechanism allows greater control of device characteristics. These characteristics can be adjusted by varying the doping densities, the layer thicknesses, and the Al mode fraction in the AlGaAs. The mechanism is analyzed using the electron temperature model and the Monte Carlo simulation. The electron temperature model is exact in the high carrier density limit, whereas the Monte Carlo method is valid in the low density limit. Both methods clearly illustrate the degree of control possible with this mechanism over device characteristics. Comparisons are made between the two models. Miscellaneous effects which are neglected in the models are discussed. These include two-dimensional effects, band bending, statistical fluctuation, and quantum mechanical transmission at the interface.
Author: Kevin F. Brennan
Publisher: World Scientific Publishing Company Incorporated
ISBN: 9789810246716
Category : Medical
Languages : en
Pages : 253
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
Get Book Here
Book Description
Author: Louis Tirino
Publisher:
ISBN:
Category : Breakdown (Electricity)
Languages : en
Pages : 310
Get Book Here
Book Description
Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared. Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.
