Fabrication of Semiconductor Devices by Neutron Transmutation Doping PDF Download
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Author:
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 178
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Author:
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 178
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Book Description
Author: Carl N. Klahr
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Carl N. Klahr
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 84
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 174
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Book Description
Author: J. Meese
Publisher: Springer Science & Business Media
ISBN: 1468482491
Category : Technology & Engineering
Languages : en
Pages : 368
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Book Description
This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Author: Jens Guldberg
Publisher: Springer
ISBN: 9781461332633
Category : Technology & Engineering
Languages : en
Pages : 506
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Book Description
This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Author: D. R. Meyers
Publisher:
ISBN:
Category : Neutron irradiation
Languages : en
Pages : 40
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Author: Robert D. Larrabee
Publisher: Springer Science & Business Media
ISBN: 1461326958
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author: Jens Guldberg
Publisher: Springer
ISBN: 9780306407383
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Author: Mikhail Efimovich Levinshteĭn
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 272
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Book Description
Drawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Simpler and less expensive, too, are the reproducible processes using rare-earth elements in the synthesis of various III-V compounds. The parameters of monocrystals and epilayers grown with these elements are equal to those obtained by more complicated and expensive techniques, such as MBE and MOVPE. This invaluable manual explains the processes and advantages of generation-relaxation of nonequilibrium intrinsic defects in Si and introduces new ideas related to the role these defects may play in the formation of the generation-recombination centers in silicon. Also described in these chapters are many original techniques for external and intrinsic gettering in different semiconductors. Important experimental results dealing with isovalent doping of direct gap III-V compounds grown by different epitaxial methods are presented in detail by leading experts. These researchers also show how to achieve precise control of material properties for all principal methods of epitaxial growth. The final section describes nontraditional techniques for photochemical etching and the production of holographic diffraction grating by means of maskless chemical etching. This technique offers the highest resolution and can be applied to more than 20 semiconductor materials, including single crystal, polycrystalline, and amorphous materials. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual. New, more effective techniques for semiconductor processing and fabrication The product of decades of Russian research in semiconductor technology, this invaluable book offers Western researchers and engineers a wide range of new techniques, recipes, and characterization methods that provide simpler, cheaper, and more effective solutions to problems in semiconductor processing and fabrication. Many of these approaches appear here for the first time in Western technological literature. Included are: * Transmutation doping of semiconductors by charged particles * Polymer diffusants in semiconductor technology * Rare-earth elements in III-V compounds * Intrinsic point defect engineering in silicon high-voltage power device technology * Isovalent impurity doping of direct-gap III-V semiconductor layers * Surface passivation of III-V compounds by inorganic dielectrics and polymides * Precision profiling of semiconductor surfaces by means of photochemical etching
