Fabrication of Self-aligned InP/InGaAsP Based Heterostructure Field-effect Transistors (HFET) and Double-heterostructure Optoelectronic Switches (DOES)

Fabrication of Self-aligned InP/InGaAsP Based Heterostructure Field-effect Transistors (HFET) and Double-heterostructure Optoelectronic Switches (DOES) PDF Author: Jonathan Lee Showell
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Category : Field-effect transistors
Languages : en
Pages : 200

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International Aerospace Abstracts

International Aerospace Abstracts PDF Author:
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Category : Aeronautics
Languages : en
Pages : 704

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Physics Briefs

Physics Briefs PDF Author:
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Category : Physics
Languages : en
Pages : 762

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Japanese Science and Technology, 1983-1984

Japanese Science and Technology, 1983-1984 PDF Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
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Category : Science
Languages : en
Pages : 1080

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Chemical Abstracts

Chemical Abstracts PDF Author:
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Category : Chemistry
Languages : en
Pages : 2002

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Science Abstracts

Science Abstracts PDF Author:
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Category : Electrical engineering
Languages : en
Pages : 980

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Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
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Category : Electrical engineering
Languages : en
Pages : 1084

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Japanese Technical Abstracts

Japanese Technical Abstracts PDF Author:
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Category : Engineering
Languages : en
Pages : 572

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Japanese Technical Periodical Index

Japanese Technical Periodical Index PDF Author:
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Category : Engineering
Languages : en
Pages : 572

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Reactive Ion Etching of InP-based Heterostructures and Field-effect Transistors Using HBr Plasma

Reactive Ion Etching of InP-based Heterostructures and Field-effect Transistors Using HBr Plasma PDF Author: Sambhulal Agarwala
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Languages : en
Pages : 270

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