Fabrication and Characterization of Metal-molecule-silicon Devices PDF Download
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Author: Li Xu
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
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Book Description
Author: Li Xu
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
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Book Description
Author: Cherng-chi Yin
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 142
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Book Description
Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642975933
Category : Technology & Engineering
Languages : en
Pages : 228
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Book Description
A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Author: Jo Nijs
Publisher: CRC Press
ISBN: 1000445062
Category : Science
Languages : en
Pages : 488
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Book Description
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722766245
Category :
Languages : en
Pages : 34
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Book Description
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Author: Yale Strausser
Publisher: Elsevier
ISBN: 0080523420
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.
Author: Kristofer J. Roe
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 264
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Book Description
Author: Stanley Middleman
Publisher: McGraw-Hill Companies
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 802
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Book Description
Written primarily for chemical engineering students, the material included in this new text is an extension of upper level chemical engineering courses. Covering a range of processes in semiconductor device fabrication, the authors try to present traditional chemical engineering methodology in a non-traditional context. The text covers such topics as crystal growth and filtration and contains over 300 worked examples and problems.
Author: Xuefeng Guo
Publisher: John Wiley & Sons
ISBN: 3527818901
Category : Technology & Engineering
Languages : en
Pages : 408
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Book Description
Provides in-depth knowledge on molecular electronics and emphasizes the techniques for designing molecular junctions with controlled functionalities This comprehensive book covers the major advances with the most general applicability in the field of molecular electronic devices. It emphasizes new insights into the development of efficient platform methodologies for building such reliable devices with desired functionalities through the combination of programmed bottom-up self-assembly and sophisticated top-down device fabrication. It also helps to develop an understanding of the device fabrication processes and the characteristics of the resulting electrode-molecule interface. Beginning with an introduction to the subject, Molecular-Scale Electronics: Concept, Fabrication and Applications offers full chapter coverage on topics such as: Metal Electrodes for Molecular Electronics; Carbon Electrodes for Molecular Electronics; Other Electrodes for Molecular Electronics; Novel Phenomena in Single-Molecule Junctions; and Supramolecular Interactions in Single-Molecule Junctions. Other chapters discuss Theoretical Aspects for Electron Transport through Molecular Junctions; Characterization Techniques for Molecular Electronics; and Integrating Molecular Functionalities into Electrical Circuits. The book finishes with a summary of the primary challenges facing the field and offers an outlook at its future. * Summarizes a number of different approaches for forming molecular-scale junctions and discusses various experimental techniques for examining these nanoscale circuits in detail * Gives overview of characterization techniques and theoretical simulations for molecular electronics * Highlights the major contributions and new concepts of integrating molecular functionalities into electrical circuits * Provides a critical discussion of limitations and main challenges that still exist for the development of molecular electronics * Suited for readers studying or doing research in the broad fields of Nano/molecular electronics and other device-related fields Molecular-Scale Electronics is an excellent book for materials scientists, electrochemists, electronics engineers, physical chemists, polymer chemists, and solid-state chemists. It will also benefit physicists, semiconductor physicists, engineering scientists, and surface chemists.
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
