Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Fabrication and Characterization of InGaN Resonant-Cavity Light-Emitting Diodes Prepared by Wafer Transfer Technologies
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Design and Characterization of Resonant Cavity Light-emitting Diodes
Author: Thomas M. Fitzgerald (CAPT, USAF.)
Publisher:
ISBN:
Category : Light emitting diodes
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Light emitting diodes
Languages : en
Pages :
Book Description
Iii-nitride Materials, Devices And Nano-structures
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1786343207
Category : Science
Languages : en
Pages : 424
Book Description
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Publisher: World Scientific
ISBN: 1786343207
Category : Science
Languages : en
Pages : 424
Book Description
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Fabrication and Characterization of Microcavity Organic Light Emitting Diodes
Author: Chi-Hang Cheung
Publisher:
ISBN: 9781361117651
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN: 9781361117651
Category :
Languages : en
Pages :
Book Description
Fabrication and Characterization of High Efficiency Microcavity Light Emitting Diodes
Author: Christian Dill
Publisher:
ISBN:
Category :
Languages : en
Pages : 133
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 133
Book Description
III-nitride Devices and Nanoengineering
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1848162235
Category : Technology & Engineering
Languages : en
Pages : 477
Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Publisher: World Scientific
ISBN: 1848162235
Category : Technology & Engineering
Languages : en
Pages : 477
Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Design, Growth and Fabrication and Characterisation of InGaN Micro Light Emitting Diodes Using a Direct Epitaxial Approach
Author: Peter Fletcher
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Fabrication and Characterization of Three-dimensionally-printed Light-emitting Diodes
Author: Ian Tamargo
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Synthesis and Characterization of Electrodes for III-nitride Resonant Cavity Light Emitting Diode Applications
Author: Vamsi Krishna Kumbham
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages :
Book Description
Resonant Cavity Light Emitting Diodes
Author: Konstanze S. Hild
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description