Fabrication and Characterization of GaN-based Light Emitting Diodes PDF Download
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Author: Ka-kuen Leung
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 372
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Book Description
Author: Ka-kuen Leung
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 372
Get Book Here
Book Description
Author: 楊於錚
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Min-Pang Lin
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Paulo Ki
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Paul Morgan Pattison
Publisher:
ISBN: 9780542929410
Category :
Languages : en
Pages : 240
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Book Description
The fabrication and characterization of novel gallium nitride based micro-cavity light emitting diodes is presented. A fabrication process was developed for creating a GaN light emitting diode within a micro-cavity of controllable thickness. The benefits of this structure can be enhanced light extraction efficiency, brightness, spectral purity, and directionality. The fabrication process involves flip chip processing, laser lift-off, and cavity thinning by inductively coupled plasma etching of the nitrogen faced GaN. Using these methods GaN based micro-cavity light emitting diodes were fabricated with cavity thicknesses as low as 350nm.
Author: 蕭佳晏
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: 王振印
Publisher:
ISBN:
Category :
Languages : en
Pages : 122
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Author: Yuxin Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 378
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Author: Robert F Davis
Publisher: World Scientific
ISBN: 9814482692
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
