Extracting Electron Densities in N-Type Gaas from Raman Spectra: Theory PDF Download
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Author: Herbert S. Bennett
Publisher: DIANE Publishing
ISBN: 1428988254
Category : Technology & Engineering
Languages : en
Pages : 127
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Book Description
Presents the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10 to the 16th cm -3 and 10 to the 19th cm -3. Compared to other theories, this theory is unique in two respects: (1) the many-body effects are treated self-consistently; and (2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q to the 2nd/alpha), where Q is the magnitude of the normalization wave vector and alpha is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. Illus.
Author: Herbert S. Bennett
Publisher: DIANE Publishing
ISBN: 1428988254
Category : Technology & Engineering
Languages : en
Pages : 127
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Book Description
Presents the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10 to the 16th cm -3 and 10 to the 19th cm -3. Compared to other theories, this theory is unique in two respects: (1) the many-body effects are treated self-consistently; and (2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q to the 2nd/alpha), where Q is the magnitude of the normalization wave vector and alpha is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. Illus.
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Book Description
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 402
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Book Description
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category :
Languages : en
Pages : 396
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Book Description
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 410
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Book Description
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1146
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Book Description
Author: Roland Winkler
Publisher: Springer Science & Business Media
ISBN: 9783540011873
Category : Technology & Engineering
Languages : en
Pages : 244
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Book Description
The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.
Author: Frederick Wooten
Publisher: Academic Press
ISBN: 1483220761
Category : Science
Languages : en
Pages : 273
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Book Description
Optical Properties of Solids covers the important concepts of intrinsic optical properties and photoelectric emission. The book starts by providing an introduction to the fundamental optical spectra of solids. The text then discusses Maxwell's equations and the dielectric function; absorption and dispersion; and the theory of free-electron metals. The quantum mechanical theory of direct and indirect transitions between bands; the applications of dispersion relations; and the derivation of an expression for the dielectric function in the self-consistent field approximation are also encompassed. The book further tackles current-current correlations; the fluctuation-dissipation theorem; and the effect of surface plasmons on optical properties and photoemission. People involved in the study of the optical properties of solids will find the book invaluable.
Author: Yongke Sun
Publisher: Springer Science & Business Media
ISBN: 1441905529
Category : Technology & Engineering
Languages : en
Pages : 353
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Book Description
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
