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Author: Christian C Enz
Publisher: Springer Science & Business Media
ISBN: 1441987983
Category : Technology & Engineering
Languages : en
Pages : 334
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Book Description
MEMS-based Circuits and Systems for Wireless Communications provides comprehensive coverage of RF-MEMS technology from device to system level. This edited volume places emphasis on how system performance for radio frequency applications can be leveraged by Micro-Electro-Mechanical Systems (MEMS). Coverage also extends to innovative MEMS-aware radio architectures that push the potential of MEMS technology further ahead. This work presents a broad overview of the technology from MEMS devices (mainly BAW and Si MEMS resonators) to basic circuits, such as oscillators and filters, and finally complete systems such as ultra-low-power MEMS-based radios. Contributions from leading experts around the world are organized in three parts. Part I introduces RF-MEMS technology, devices and modeling and includes a prospective outlook on ongoing developments towards Nano-Electro-Mechanical Systems (NEMS) and phononic crystals. Device properties and models are presented in a circuit oriented perspective. Part II focusses on design of electronic circuits incorporating MEMS. Circuit design techniques specific to MEMS resonators are applied to oscillators and active filters. In Part III contributors discuss how MEMS can advantageously be used in radios to increase their miniaturization and reduce their power consumption. RF systems built around MEMS components such as MEMS-based frequency synthesis including all-digital PLLs, ultra-low power MEMS-based communication systems and a MEMS-based automotive wireless sensor node are described.
Author: Christian C Enz
Publisher: Springer Science & Business Media
ISBN: 1441987983
Category : Technology & Engineering
Languages : en
Pages : 334
Get Book Here
Book Description
MEMS-based Circuits and Systems for Wireless Communications provides comprehensive coverage of RF-MEMS technology from device to system level. This edited volume places emphasis on how system performance for radio frequency applications can be leveraged by Micro-Electro-Mechanical Systems (MEMS). Coverage also extends to innovative MEMS-aware radio architectures that push the potential of MEMS technology further ahead. This work presents a broad overview of the technology from MEMS devices (mainly BAW and Si MEMS resonators) to basic circuits, such as oscillators and filters, and finally complete systems such as ultra-low-power MEMS-based radios. Contributions from leading experts around the world are organized in three parts. Part I introduces RF-MEMS technology, devices and modeling and includes a prospective outlook on ongoing developments towards Nano-Electro-Mechanical Systems (NEMS) and phononic crystals. Device properties and models are presented in a circuit oriented perspective. Part II focusses on design of electronic circuits incorporating MEMS. Circuit design techniques specific to MEMS resonators are applied to oscillators and active filters. In Part III contributors discuss how MEMS can advantageously be used in radios to increase their miniaturization and reduce their power consumption. RF systems built around MEMS components such as MEMS-based frequency synthesis including all-digital PLLs, ultra-low power MEMS-based communication systems and a MEMS-based automotive wireless sensor node are described.
Author: Yasuhisa Omura
Publisher: The Electrochemical Society
ISBN: 1566778662
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This is the continuation of the long running ¿Silicon-on-Insulator Technology and Devices¿ symposium. The issue of ECS Transactions covers recent significant advances in SOI technologies, SOI-based nanoelectronics and innovative applications including scientific interests. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers and scientists.
Author: Damien Querlioz
Publisher: John Wiley & Sons
ISBN: 1118618440
Category : Technology & Engineering
Languages : en
Pages : 191
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Book Description
The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.
Author: Giovanni DeMicheli
Publisher: Springer Science & Business Media
ISBN: 1441902554
Category : Technology & Engineering
Languages : en
Pages : 186
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Book Description
Nanosystems use new, nanoscopic electrical and/or mechanical devices which, as constituents of electronic and electromechanical systems, find application primarily in computing, embedded control and biomedical data acquisition. In particular, this book will deal with the characterization and patterning of these materials from an engineering perspective, with the objective of creating operational prototypes and products. The book will integrate various nano technologies on materials, devices and systems and identify key areas and results. The book will describe different design aspects for integrated systems on silicon, as well as on heterogeneous platforms including, but not limited to, electrical, optical, micromechanical and biological components in various forms and mixtures. By associating research topics from differing horizons, the book will provide a unique opportunity to bridge the gap between electronics/electrical engineering and materials science. The book will include topics at the intersection of these disciplines, and will interface with computer science, biology and medicine.
Author: Davies William de Lima Monteiro
Publisher: The Electrochemical Society
ISBN: 1566777372
Category : Science
Languages : en
Pages : 639
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Book Description
This issue of ECS Transactions features eight invited and sixty-seven regular papers on technology, devices, systems, optoelectronics, modeling and characterization; all either directly or indirectly related to microelectronics. The topics presented herein reveal the multidisciplinary character of this field, which definitely incites the highly cooperative trace of human nature.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Tibor Grasser
Publisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Author: François Triozon
Publisher: John Wiley & Sons
ISBN: 111876188X
Category : Technology & Engineering
Languages : en
Pages : 341
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Book Description
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Yasuhisa Omura
Publisher: The Electrochemical Society
ISBN: 1566777127
Category : Semiconductors
Languages : en
Pages : 357
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Book Description
This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors
