Epitaxial Growth of Layered Structures of Silicon Carbide and Aluminum Nitride by Metal-organic Chemical Vapor Deposition PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Epitaxial Growth of Layered Structures of Silicon Carbide and Aluminum Nitride by Metal-organic Chemical Vapor Deposition PDF full book. Access full book title Epitaxial Growth of Layered Structures of Silicon Carbide and Aluminum Nitride by Metal-organic Chemical Vapor Deposition by Bei-Shen Sywe. Download full books in PDF and EPUB format.
Author: Bei-Shen Sywe
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
Get Book Here
Book Description
Author: Bei-Shen Sywe
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
Get Book Here
Book Description
Author: Ingrid Gwyn Jenkins
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
Get Book Here
Book Description
Author: Payam Shoghi
Publisher:
ISBN:
Category :
Languages : en
Pages : 154
Get Book Here
Book Description
Crystalline layers of SiC were grown on A1N substrate using chemical vapor deposition (CVD) from a single gas source; Trimethylsilane as well as a combination of ethylene (C[subscript]2H[subscript]4), silane (SiH[subscript]4), and hydrogen (H[subscript]2) gas. The growth was conducted at temperatures ranging from 1100 to 1350[degrees]C and pressures ranging from 0.09 torr to l.86 torr. The study was conducted on AlN grown on sapphire as well as on polycrystalline AlN substrates. The CVD growth system, which was made by OSEMI, was designed to operate in wide range of pressures (10[superscript]-8 to atmospheric) and temperatures (room temperature to -2000[degrees]C) using RF heating. The system is integrated with a molecular beam epitaxy (MBE) unit to enable direct transfer of A1N layers, grown by MBE, into the CVD system. X-ray measurements, carried out using PANalytical X'Pert X-ray diffraction system demonstrated growth of single crystalline SiC while surface morphology was examined using Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM), qualitative measure of the layers' stoichiometry was carried out using Energy Dispersive X-ray examination using conventional EDAX. The formation of single crystalline 3C-SiC was confirmed by X-ray diffraction. Atomic force microscopy (AFM) showed an increase in the roughness of the morphology for thick cubic SiC on A1N on Sapphire substrate. SEM and EDAX measurements showed the thickness of the SiC thin film and the ratio of Si and C atoms in the film.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 806
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Get Book Here
Book Description
Author: Michael G. Spencer
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 768
Get Book Here
Book Description
USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding
Author: Donald T. Hawkins
Publisher: Springer
ISBN:
Category : Reference
Languages : en
Pages : 762
Get Book Here
Book Description
Author: I. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 69
Get Book Here
Book Description
Author: M. Dudley
Publisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
Get Book Here
Book Description
Author: Hans J. Scheel
Publisher: John Wiley & Sons
ISBN: 0470491108
Category : Science
Languages : en
Pages : 695
Get Book Here
Book Description
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
