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Author: U. Rössler
Publisher: Springer
ISBN: 9783540428763
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.
Author: U. Rössler
Publisher: Springer
ISBN: 9783540428763
Category : Technology & Engineering
Languages : en
Pages : 347
Get Book Here
Book Description
Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.
Author: Sadao Adachi
Publisher: IET
ISBN: 9780852965580
Category : Science
Languages : en
Pages : 354
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Book Description
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author: Supriyo Datta
Publisher: Cambridge University Press
ISBN: 1139643010
Category : Science
Languages : en
Pages : 398
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Book Description
Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.
Author: M. R. Brozel
Publisher: Inst of Engineering & Technology
ISBN: 9780852968857
Category : Technology & Engineering
Languages : en
Pages : 981
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Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author: Hartmut Haug
Publisher: World Scientific Publishing Company
ISBN: 9813104783
Category : Science
Languages : en
Pages : 492
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Book Description
This textbook presents the basic elements needed to understand and engage in research in semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. The fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, optical Stark effect, semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects are covered. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics. Request Inspection Copy
Author: David J. Singh
Publisher: Springer Science & Business Media
ISBN: 1475723121
Category : Technology & Engineering
Languages : en
Pages : 121
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Book Description
Over the past decade the world's technological and industrial base has become increasingly dependent on advanced materials. There is every indication that this trend will accelerate and that progress in many areas will increasingly depend on the development of new materials and processing techniques. A second and equally significant trend is the continuing ascent of the information technologies, which now touch almost every aspect of life in some way. In this environment it is natural that there is a strong interest in using numerical modeling in materials science. With its extreme accuracy and reasonable computational efficiency, the linearized augmented plane wave (LAPW) method has emerged as the standard by which density functional calculations for transition metal and rare-earth containing materials are judged. Planewaves, Pseudopotentials and the LAPW Method presents a thorough and self-contained exposition of the LAPW method, making this powerful technique more accessible to researchers and students who have some familiarity with local density approximation calculations. Theory is discussed, but the emphasis is on how practical implementation proceeds. In addition, the author suggests future directions for adapting the LAPW method to simulations of complex materials requiring large unit cells. He does this by elucidating the connections between the LAPW method and planewave pseudopotential approaches and by showing how Car--Parrinello type algorithms can be adapted to the LAPW method. Planewaves, Pseudopotentials and the LAPW Method is a valuable resource for researchers already involved in electronic structure calculations, as well as for newcomers seeking quick mastery of the LAPW technique.
Author: Jasprit Singh
Publisher: Cambridge University Press
ISBN: 1139440578
Category : Technology & Engineering
Languages : en
Pages : 556
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Book Description
A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from
[email protected].
Author: Marvin L. Cohen
Publisher: Cambridge University Press
ISBN: 0521513316
Category : Science
Languages : en
Pages : 461
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Book Description
Based on an established course and covering all the fundamentals, central areas and contemporary topics of this diverse field, Fundamentals of Condensed Matter Physics is a much-needed textbook for graduate students. Coverage of concepts and techniques ensures that both theoretically and experimentally inclined students gain the strong understanding needed for research and teaching.
Author: Alexander Leonidovich Kuzemsky
Publisher: World Scientific
ISBN: 981314565X
Category : Science
Languages : en
Pages : 1259
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Book Description
The book is devoted to the study of the correlation effects in many-particle systems. It presents the advanced methods of quantum statistical mechanics (equilibrium and nonequilibrium), and shows their effectiveness and operational ability in applications to problems of quantum solid-state theory, quantum theory of magnetism and the kinetic theory. The book includes description of the fundamental concepts and techniques of analysis following the approach of N N Bogoliubov's school, including recent developments. It provides an overview that introduces the main notions of quantum many-particle physics with the emphasis on concepts and models.This book combines the features of textbook and research monograph. For many topics the aim is to start from the beginning and to guide the reader to the threshold of advanced researches. Many chapters include also additional information and discuss many complex research areas which are not often discussed in other places. The book is useful for established researchers to organize and present the advanced material disseminated in the literature. The book contains also an extensive bibliography.The book serves undergraduate, graduate and postgraduate students, as well as researchers who have had prior experience with the subject matter at a more elementary level or have used other many-particle techniques.
Author: Eckehard Schöll
Publisher: Springer Science & Business Media
ISBN: 1461558077
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
