Electronic States and Optical Properties of Quantum Well Heterostructures with Strain Electric Field Effects PDF Download
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Author: Desmond Michael Ryan
Publisher:
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Category :
Languages : en
Pages :
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Author: Desmond Michael Ryan
Publisher:
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Category :
Languages : en
Pages :
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Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 9789056995676
Category : Science
Languages : en
Pages : 606
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Book Description
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Author: B.R. Nag
Publisher: Springer Science & Business Media
ISBN: 0306471272
Category : Science
Languages : en
Pages : 309
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Book Description
Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.
Author: Alexander Shik
Publisher: World Scientific
ISBN: 9814496863
Category : Science
Languages : en
Pages : 106
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Book Description
This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.
Author:
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ISBN:
Category :
Languages : en
Pages : 6
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Experimental and theoretical investigation of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice-mismatched heterostructure were characterized with photoluminescence (PL), PL excitation and polarization spectroscopies. Influence of electrical field on exciton states in the strained-layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.
Author: Fedor T. Vasko
Publisher: Springer Science & Business Media
ISBN: 1461205352
Category : Technology & Engineering
Languages : en
Pages : 402
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Book Description
The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.
Author: E.E. Mendez
Publisher: Springer Science & Business Media
ISBN: 1468454781
Category : Science
Languages : en
Pages : 456
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Book Description
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 69
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Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Electronic books
Languages : en
Pages : 238
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Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
We have used an external electric field to control important properties of semiconductor quantum wells. Specifically: (1) We have modified the exciton-exciton interaction. This interaction is determined by many-body effects, which depend on the overlap between the exciton's electron and hole wavefunctions, and is manifested in the energy difference between photoluminescence spectra with different polarizations. In time-resolved photoluminescence (PL) experiments with circular polarization we have observed that spectral difference, which we controlled by an electric field applied to GaAs-GaAlAs coupled quantum wells. Our results confirm the predictions of theory but also point out its limitations to fully explain our observations. (2) We have reversed the valence-band ordering in strained-layer quantum wells, thus 'undoing' the effects of strain. To prove the concept we have used strained InGaAs-InAlAs quantum wells in which the light-hole state is the ground state in the valence band. Photocurrent measurements under various fields have shown a change in the valence-band states that contribute to the fundamental (lowest-energy) transition, from light-hole states to heavy-hole states. This result opens the door to reversing the polarization of light emission in quantum wells, from TM to TE, which could find application in optical modulators. (3) We have shown the presence of low-temperature exciton-photon coupling in microcavities using PL spectroscopy. Because of thermalization until now it has been almost impossible to use PL to study at low temperature (T = 20K or less) the coupling of excitons and photons. We have determined the difference between the lowest-energy PL peak from a quantum well-microcavity system and that of an isolated quantum well, at various temperatures. This difference is constant with T when a field is applied but is T dependent when the field is suppressed. The maximum variation is a direct measure of the exciton-photon coupling.
