Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures PDF Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501

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Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures PDF Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501

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Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Semiconductor Interfaces at the Sub-Nanometer Scale

Semiconductor Interfaces at the Sub-Nanometer Scale PDF Author: H.W.M Salemink
Publisher: Springer Science & Business Media
ISBN: 940112034X
Category : Technology & Engineering
Languages : en
Pages : 252

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Book Description
The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Semiconductor Nanomaterials

Semiconductor Nanomaterials PDF Author: Challa S. S. R. Kumar
Publisher: John Wiley & Sons
ISBN: 3527321667
Category : Technology & Engineering
Languages : en
Pages : 499

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Book Description
The book series Nanomaterials for the Life Sciences, provides an in-depth overview of all nanomaterial types and their uses in the life sciences. Each volume is dedicated to a specific material class and covers fundamentals, synthesis and characterization strategies, structure-property relationships and biomedical applications. The series brings nanomaterials to the Life Scientists and life science to the Materials Scientists so that synergies are seen and developed to the fullest. Written by international experts of various facets of this exciting field of research, the series is aimed at scientists of the following disciplines: biology, chemistry, materials science, physics, bioengineering, and medicine, together with cell biology, biomedical engineering, pharmaceutical chemistry, and toxicology, both in academia and fundamental research as well as in pharmaceutical companies. VOLUME 6 - Semiconductor Nanomaterials

Nanocrystals

Nanocrystals PDF Author: Sudheer Neralla
Publisher: BoD – Books on Demand
ISBN: 9535107143
Category : Science
Languages : en
Pages : 214

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Book Description
Nanocrystals research has been an area of significant interest lately, due to the wide variety of potential applications in semiconductor, optical and biomedical fields. This book consists of a collection of research work on nanocrystals processing and characterization of their structural, optical, electronic, magnetic and mechanical properties. Various methods for nanocrystals synthesis are discussed in the book. Size-dependent properties such as quantum confinement, superparamagnetism have been observed in semiconductor and magnetic nanoparticles. Nanocrystals incorporated into different material systems have proven to possess improved properties. A review of the exciting outcomes nanoparticles study has provided indicates further accomplishments in the near future.

Extended Defects in Semiconductors

Extended Defects in Semiconductors PDF Author: D. B. Holt
Publisher: Cambridge University Press
ISBN: 9781107424142
Category : Science
Languages : en
Pages : 0

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Book Description
Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Optical and Electronic Process of Nano-Matters

Optical and Electronic Process of Nano-Matters PDF Author: Motoichi Ohtsu
Publisher: Springer Science & Business Media
ISBN: 9401724822
Category : Technology & Engineering
Languages : en
Pages : 342

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Book Description
Sizes of electronic and photonic devices are decreasing drastically in order to increase the degree of integration for large-capacity and ultrahigh speed signal transmission and information processing. This miniaturization must be rapidly progressed from now onward. For this progress, the sizes of materials for composing these devices will be also decreased to several nanometers. If such a nanometer-sized material is combined with the photons and/or some other fields, it can exhibit specific characters, which are considerably different from those ofbulky macroscopic systems. This combined system has been called as a mesoscopic system. The first purpose of this book is to study the physics of the mesoscopic system. For this study, it is essential to diagnose the characteristics of miniaturized devices and materials with the spatial resolution as high as several nanometers or even higher. Therefore, novel methods, e.g., scanning probe microscopy, should be developed for such the high-resolution diagnostics. The second purpose of this book is to explore the possibility of developing new methods for these diagnostics by utilizing local interaction between materials and electron, photon, atomic force, and so on. Conformation and structure of the materials of the mesoscopic system can be modified by enhancing the local interaction between the materials and electromagnetic field. This modification can suggest the possibility of novel nano-fabrication methods. The third purpose of this book is to explore the methods for such nano-fabrication.

Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces PDF Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269

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Book Description
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Electronic Properties of Carbon Nanotubes

Electronic Properties of Carbon Nanotubes PDF Author: Jose Mauricio Marulanda
Publisher: BoD – Books on Demand
ISBN: 953307499X
Category : Science
Languages : en
Pages : 700

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Book Description
Carbon nanotubes (CNTs), discovered in 1991, have been a subject of intensive research for a wide range of applications. These one-dimensional (1D) graphene sheets rolled into a tubular form have been the target of many researchers around the world. This book concentrates on the semiconductor physics of carbon nanotubes, it brings unique insight into the phenomena encountered in the electronic structure when operating with carbon nanotubes. This book also presents to reader useful information on the fabrication and applications of these outstanding materials. The main objective of this book is to give in-depth understanding of the physics and electronic structure of carbon nanotubes. Readers of this book should have a strong background on physical electronics and semiconductor device physics. This book first discusses fabrication techniques followed by an analysis on the physical properties of carbon nanotubes, including density of states and electronic structures. Ultimately, the book pursues a significant amount of work in the industry applications of carbon nanotubes.

Nanotechnology for Microelectronics and Optoelectronics

Nanotechnology for Microelectronics and Optoelectronics PDF Author: Raúl José Martín-Palma
Publisher: Elsevier
ISBN: 0080456952
Category : Technology & Engineering
Languages : en
Pages : 302

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Book Description
When solids are reduced to the nanometer scale, they exibit new and exciting behaviours which constitute the basis for a new generation of electronic devices. Nanotechnology for Microelectronics and Optoelectronics outlines in detail the fundamental solid-state physics concepts that explain the new properties of matter caused by this reduction of solids to the nanometer scale. Applications of these electronic properties is also explored, helping students and researchers to appreciate the current status and future potential of nanotechnology as applied to the electronics industry. - Explains the behavioural changes which occur in solids at the nanoscale, making them the basis of a new generation of electronic devices - Laid out in text-reference style: a cohesive and specialised introduction to the fundamentals of nanoelectronics and nanophotonics for students and researchers alike

Nano-Physics and Bio-Electronics

Nano-Physics and Bio-Electronics PDF Author: T. Chakraborty
Publisher: Elsevier
ISBN: 0080537243
Category : Technology & Engineering
Languages : en
Pages : 363

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Book Description
This book is a collection of some of the invited talks presented at the international meeting held at the Max Planck Institut fuer Physik Komplexer Systeme, Dresden, Germany during August 6-30, 2001, on the rapidly developing field of nanoscale science in science and bio-electronics Semiconductor physics has experienced unprecedented developments over the second half of the twentieth century. The exponential growth in microelectronic processing power and the size of dynamic memorie has been achieved by significant downscaling of the minimum feature size. Smaller feature sizes result in increased functional density, faster speed, and lower costs. In this process one is reaching the limits where quantum effects and fluctuations are beginning to play an important role. This book reflects the achievements of the present times and future directions of research on nanoscopic dimensions.