Electrical Properties and Fabrication Techniques of Extremely-short Gate Length GaAs Single-gate and Dual-gate MESFET's

Electrical Properties and Fabrication Techniques of Extremely-short Gate Length GaAs Single-gate and Dual-gate MESFET's PDF Author: Pane-Chane Chao
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 408

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Electrical Properties and Fabrication Techniques of Extremely-short Gate Length GaAs Single-gate and Dual-gate MESFET's

Electrical Properties and Fabrication Techniques of Extremely-short Gate Length GaAs Single-gate and Dual-gate MESFET's PDF Author: Pane-Chane Chao
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 408

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Fabrication and Performance of Gallium Arsenide Planar-doped Barrier Transistors

Fabrication and Performance of Gallium Arsenide Planar-doped Barrier Transistors PDF Author: Mark Alexander Hollis
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 548

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Design and Electron Beam Fabrication of Half Micrometer Low Noise GaAs Mesfet's

Design and Electron Beam Fabrication of Half Micrometer Low Noise GaAs Mesfet's PDF Author: Lovell Harold Camnitz
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 220

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Electronic Materials Handbook

Electronic Materials Handbook PDF Author:
Publisher: ASM International
ISBN: 9780871702852
Category : Technology & Engineering
Languages : en
Pages : 1234

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Book Description
Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.

Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 680

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Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena

Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena PDF Author: Kompa, Günter
Publisher: kassel university press GmbH
ISBN: 3862195414
Category : Compound semiconductors
Languages : en
Pages : 762

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Book Description
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA PDF Author: Gerald B. Stringfellow
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680

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Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Annual Report to the President

Annual Report to the President PDF Author: Cornell University. College of Engineering
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 1106

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Newsletter

Newsletter PDF Author: Cornell University. Engineering Library
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 576

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RF and Microwave Passive and Active Technologies

RF and Microwave Passive and Active Technologies PDF Author: Mike Golio
Publisher: CRC Press
ISBN: 142000672X
Category : Technology & Engineering
Languages : en
Pages : 736

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Book Description
In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.