Electrical Modeling of Through Silicon Vias for 3D Integrated Circuits Considering Non Linear Effects PDF Download
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Author: Stefano Piersanti
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Stefano Piersanti
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Khaled Salah
Publisher: Springer
ISBN: 3319076116
Category : Technology & Engineering
Languages : en
Pages : 181
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Book Description
This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.
Author: Aida Todri-Sanial
Publisher: CRC Press
ISBN: 1498710379
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.
Author: Manho Lee
Publisher: Springer
ISBN: 9401790388
Category : Technology & Engineering
Languages : en
Pages : 286
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Book Description
Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity and thermal integrity. Most of the analysis in this book includes simulations, numerical modelings and measurements for verification. The author and co-authors in each chapter have studied deep into TSV for many years and the accumulated technical know-hows and tips for related subjects are comprehensively covered.
Author: Ehrenfried Zschech
Publisher: American Institute of Physics
ISBN: 9780735409385
Category : Science
Languages : en
Pages : 0
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Book Description
Scientist and engineers as well as graduate students in the fields of This conference will be of interest to anyone involved in Physics, Electrical Engineering, Materials Science and Engineering, Reliability and Quality Management, both in industry and academia. One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in 3D IC integration. Stresses arising in 3D TSV interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration can lead to performance reduction, reliability-limiting degradation and failure of microelectronic products. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. Management of mechanical stress is one of the key enablers for the successful implementation of 3D-integrated circuits using through silicon vias (TSVs). The potential stress-related impact of the 3D integration process on the device characteristics must be understood and shared, and designers need a solution for managing stress. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in 3D IC integration. Modelling and simulation capabilities as well as materials characterization are demonstrated to evaluate the effect of stress on product performance.
Author: Er-Ping Li
Publisher: John Wiley & Sons
ISBN: 0470623462
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
New advanced modeling methods for simulating the electromagnetic properties of complex three-dimensional electronic systems Based on the author's extensive research, this book sets forth tested and proven electromagnetic modeling and simulation methods for analyzing signal and power integrity as well as electromagnetic interference in large complex electronic interconnects, multilayered package structures, integrated circuits, and printed circuit boards. Readers will discover the state of the technology in electronic package integration and printed circuit board simulation and modeling. In addition to popular full-wave electromagnetic computational methods, the book presents new, more sophisticated modeling methods, offering readers the most advanced tools for analyzing and designing large complex electronic structures. Electrical Modeling and Design for 3D System Integration begins with a comprehensive review of current modeling and simulation methods for signal integrity, power integrity, and electromagnetic compatibility. Next, the book guides readers through: The macromodeling technique used in the electrical and electromagnetic modeling and simulation of complex interconnects in three-dimensional integrated systems The semi-analytical scattering matrix method based on the N-body scattering theory for modeling of three-dimensional electronic package and multilayered printed circuit boards with multiple vias Two- and three-dimensional integral equation methods for the analysis of power distribution networks in three-dimensional package integrations The physics-based algorithm for extracting the equivalent circuit of a complex power distribution network in three-dimensional integrated systems and printed circuit boards An equivalent circuit model of through-silicon vias Metal-oxide-semiconductor capacitance effects of through-silicon vias Engineers, researchers, and students can turn to this book for the latest techniques and methods for the electrical modeling and design of electronic packaging, three-dimensional electronic integration, integrated circuits, and printed circuit boards.
Author: Hengyun Zhang
Publisher: Woodhead Publishing
ISBN: 0081025335
Category : Technology & Engineering
Languages : en
Pages : 436
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Book Description
Modeling, Analysis, Design and Testing for Electronics Packaging Beyond Moore provides an overview of electrical, thermal and thermomechanical modeling, analysis, design and testing for 2.5D/3D. The book addresses important topics, including electrically and thermally induced issues, such as EMI and thermal issues, which are crucial to package signal and thermal integrity. It also covers modeling methods to address thermomechanical stress related to the package structural integrity. In addition, practical design and test techniques for packages and systems are included. - Includes advanced modeling and analysis methods and techniques for state-of-the art electronics packaging - Features experimental characterization and qualifications for the analysis and verification of electronic packaging design - Provides multiphysics modeling and analysis techniques of electronic packaging
Author: Madhavan Swaminathan
Publisher: World Scientific
ISBN: 9814508608
Category : Technology & Engineering
Languages : en
Pages : 379
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Book Description
3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the Silicon Via (TSV) and Glass Via (TGV) technology, the book introduces 3DICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the potential of this technology in design exchange formats and power distribution.
Author: Sung Kyu Lim
Publisher: Springer Science & Business Media
ISBN: 1441995420
Category : Technology & Engineering
Languages : en
Pages : 573
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Book Description
This book provides readers with a variety of algorithms and software tools, dedicated to the physical design of through-silicon-via (TSV) based, three-dimensional integrated circuits. It describes numerous “manufacturing-ready” GDSII-level layouts of TSV-based 3D ICs developed with the tools covered in the book. This book will also feature sign-off level analysis of timing, power, signal integrity, and thermal analysis for 3D IC designs. Full details of the related algorithms will be provided so that the readers will be able not only to grasp the core mechanics of the physical design tools, but also to be able to reproduce and improve upon the results themselves. This book will also offer various design-for-manufacturability (DFM), design-for-reliability (DFR), and design-for-testability (DFT) techniques that are considered critical to the physical design process.
Author: Dae Hyun Kim
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages :
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Book Description
The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.
