Doping Engineering for Front-End Processing: Volume 1070 PDF Download
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Author: Materials Research Society. Meeting Symposium E.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Meeting Symposium E.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Erin C. Jones
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 362
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: B. J. Pawlak
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 240
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Book Description
This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.
Author: Sami Franssila
Publisher: John Wiley & Sons
ISBN: 1119991897
Category : Technology & Engineering
Languages : en
Pages : 534
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Book Description
This accessible text is now fully revised and updated, providing an overview of fabrication technologies and materials needed to realize modern microdevices. It demonstrates how common microfabrication principles can be applied in different applications, to create devices ranging from nanometer probe tips to meter scale solar cells, and a host of microelectronic, mechanical, optical and fluidic devices in between. Latest developments in wafer engineering, patterning, thin films, surface preparation and bonding are covered. This second edition includes: expanded sections on MEMS and microfluidics related fabrication issues new chapters on polymer and glass microprocessing, as well as serial processing techniques 200 completely new and 200 modified figures more coverage of imprinting techniques, process integration and economics of microfabrication 300 homework exercises including conceptual thinking assignments, order of magnitude estimates, standard calculations, and device design and process analysis problems solutions to homework problems on the complementary website, as well as PDF slides of the figures and tables within the book With clear sections separating basic principles from more advanced material, this is a valuable textbook for senior undergraduate and beginning graduate students wanting to understand the fundamentals of microfabrication. The book also serves as a handy desk reference for practicing electrical engineers, materials scientists, chemists and physicists alike. www.wiley.com/go/Franssila_Micro2e
Author:
Publisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 320
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Book Description
Author: Dim-Lee Kwong
Publisher: The Electrochemical Society
ISBN: 9781566773157
Category : Technology & Engineering
Languages : en
Pages : 458
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Book Description
"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Author: Michael Dudley
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 312
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Book Description
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728600
Category : Computers
Languages : en
Pages : 472
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Book Description
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Author: P. J. Timans
Publisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488
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Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
