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Author: Kamakhya Prasad Ghatak
Publisher: Springer
ISBN: 3319210009
Category : Technology & Engineering
Languages : en
Pages : 664
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Book Description
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
Author: Kamakhya Prasad Ghatak
Publisher: Springer
ISBN: 3319210009
Category : Technology & Engineering
Languages : en
Pages : 664
Get Book Here
Book Description
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
Author: Sudipta Das
Publisher: Springer Nature
ISBN: 9811657319
Category : Science
Languages : en
Pages : 375
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Book Description
This book highlights the growing applications of THz technology and various modules used for their successful realization. The enormous advantages of THz devices like higher resolution, spatial directivity, high-speed communication, greater bandwidth, non-ionizing signal nature and compactness make them useful in various applications like communication, sensing, security, safety, spectroscopy, manufacturing, bio-medical, agriculture, imaging, etc. Since the THz radiation covers frequencies from 0.1THz to around 10THz and highly attenuated by atmospheric gases, they are used in short-distance applications only. The book focuses on recent advances and different research issues in terahertz technology and presents theoretical, methodological, well-established and validated empirical works dealing with the different topics.
Author: Kamakhya Prasad Ghatak
Publisher: Springer Science & Business Media
ISBN: 354079557X
Category : Science
Languages : en
Pages : 471
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Book Description
Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.
Author: Engg Kamakhya Prasad Ghatak
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110661195
Category : Science
Languages : en
Pages : 492
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Book Description
This monograph investigates the entropy in heavily doped (HD) quantized structures by analyzing under the influence of magnetic quantization, crossed electric and quantizing fields the range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces. Finally the authors address various challenges in today’s research of optoelectronic materials and give an outlook to future studies.
Author: Vasudevan Lakshminarayanan
Publisher: Springer
ISBN: 8132223675
Category : Science
Languages : en
Pages : 620
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Book Description
The Proceedings of First International Conference on Opto-Electronics and Applied Optics 2014, IEM OPTRONIX 2014 presents the research contributions presented in the conference by researchers from both India and abroad. Contributions from established scientists as well as students are included. The book is organized to enable easy access to various topics of interest. The first part includes the Keynote addresses by Phillip Russell, Max Planck Institute of the Light Sciences, Erlangen, Germany and Lorenzo Pavesi, University of Trento, Italy. The second part focuses on the Plenary Talks given by eminent scientists, namely, Azizur Rahman, City University London, London; Bishnu Pal, President, The Optical Society of India; Kamakhya Ghatak, National Institute of Technology, Agartala; Kehar Singh, Former Professor, India Institute of Technology Delhi; Mourad Zghal, SUPCOM, University of Carthage, Tunisia; Partha Roy Chaudhuri, IIT Kharagpur; S K. Bhadra, CSIR-Central Glass and Ceramic Research Institute, Kolkata; Sanjib Chatterjee, Raja Ramanna Centre for Advanced Technology, Indore; Takeo Sasaki, Tokyo University, Japan; Lakshminarayan Hazra, Emeritus Professor, University of Calcutta, Kolkata; Shyam Akashe, ITM University, Gwalior and Vasudevan Lakshminarayanan, University of Waterloo, Canada. The subsequent parts focus on topic-wise contributory papers in Application of Solar Energy; Diffraction Tomography; E.M. Radiation Theory and Antenna; Fibre Optics and Devices; Photonics for Space Applications; Micro-Electronics and VLSI; Nano-Photonics, Bio-Photonics and Bio-Medical Optics; Non-linear Phenomena and Chaos; Optical and Digital Data and Image Processing; Optical Communications and Networks; Optical Design; Opto-Electronic Devices; Opto-Electronic Materials and Quantum Optics and Information Processing.
Author: Kamakhya Prasad Ghatak
Publisher: World Scientific
ISBN: 9811263671
Category : Science
Languages : en
Pages : 790
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Book Description
The concepts of the Electron Statistics (ES) and the ES dependent electronic properties are basic pillars in semiconductor electronics and this first-of-its-kind book deals with the said concepts in doping superlattices (SLs), quantum well, quantum wire and quantum dot SLs, effective mass SLs, SLs with graded interfaces and Fibonacci SLs under different physical conditions respectively. The influences of intense radiation and strong electric fields under said concepts have been considered together with the heavily doped SLs in this context on the basis of newly formulated the electron energy spectra in all the cases. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds 25 different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers. It is written for post graduate students of various departments of different academic organizations, engineers and professionals in the fields of solid state electronics, materials science, solid state sciences, nano-science, nanotechnology and nano materials in general.
Author: Kamakhya Prasad Ghatak
Publisher: World Scientific
ISBN: 9811279411
Category : Science
Languages : en
Pages : 886
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Book Description
In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.
Author: Kamakhya Prasad Ghatak
Publisher: Springer Nature
ISBN: 9811698449
Category : Science
Languages : en
Pages : 253
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Book Description
This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg’s Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures.
Author: Aritra Acharyya
Publisher: Springer Nature
ISBN: 9811963010
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
This book presents recent and upcoming technological advancements in millimeter-wave (mm-wave), infrared (IR) and terahertz (THz) frequency spectrums. The scope of this book includes a significantly long portion of the electromagnetic spectrum, starting from the mm-waves (i.e. 30 GHz) and extended up to the end of the near-IR spectrum (i.e. 450 THz). Most significant aspect of this portion of the electromagnetic spectrum is that it includes a frequency regime where the gradual technological transition from electronics to photonics occurred. The book especially focuses on the recent advancements and several research issues related to materials, sources, detectors, passive circuits, advanced signal processing and image processing algorithms for mm-wave, IR and THz frequency bands. The book covers a very wide range of readers from basic science to technological experts as well as research scholars.
Author: Kamakhya Prasad Ghatak
Publisher: World Scientific
ISBN: 9811229481
Category : Science
Languages : en
Pages : 1036
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Book Description
The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.
