Direct Observation of Local Layer Structure Defects in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-ray Micro-diffraction

Direct Observation of Local Layer Structure Defects in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-ray Micro-diffraction PDF Author: Atsuo Iida
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Category :
Languages : en
Pages :

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Characterization of the Local Layer Structure of a Broad Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-ray Micro-diffraction

Characterization of the Local Layer Structure of a Broad Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-ray Micro-diffraction PDF Author: A. Iida
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ISBN:
Category :
Languages : en
Pages : 31

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JJAP

JJAP PDF Author:
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ISBN:
Category : Engineering
Languages : en
Pages : 1236

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Japanese Journal of Applied Physics

Japanese Journal of Applied Physics PDF Author:
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ISBN:
Category : Physics
Languages : en
Pages : 1002

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Photon Factory Activity Report

Photon Factory Activity Report PDF Author: Kē-enerugī Butsurigaku Kenkyūjo (Japan). Hōshakō Jikken Shisetsu
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Category : Photon factories
Languages : en
Pages : 630

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Microscopic X-Ray Fluorescence Analysis

Microscopic X-Ray Fluorescence Analysis PDF Author: Koen H. A. Janssens
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Category : Science
Languages : en
Pages : 454

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Techniques for the Direct Observation of Structure and Imperfections

Techniques for the Direct Observation of Structure and Imperfections PDF Author: Rointan Framroze Bunshah
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Category : Electronic data processing
Languages : en
Pages : 526

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X-ray Diffraction Microscopy of Imperfections in Semiconductor Crystals

X-ray Diffraction Microscopy of Imperfections in Semiconductor Crystals PDF Author: G. H. Schwuttke
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Category : Crystals
Languages : en
Pages : 140

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Three techniques have been perfected: (1) highintensity x-ray diffraction microscopy by extinction contrast, (2) x-ray diffraction microscopy through scanning oscillator technique, and (3) direct observation of imperfections in semiconductor crystals through anomalous transmission of x-rays. In type I diamonds, long-range strain fields were found to be the dominating imperfection, and dislocations appeared to be closely related to strain centers. Type II diamonds showed a much higher density of edge dislocations with Burgers vectors in (111) planes. The investigations on silicon led to the detection of several new crystal defects not previously known to occur in silicon. It was found that silicon crystals of zero dislocations may contain microstrains and large-area stacking faults. Epitaxial silicon layers were extensively investigated. Defect structures on epitaxial silicon were identified as stacking faults. X-ray diffraction microscopy of shallow-diffused junctions in silicon led to the discovery that diffusion of boron or phosphorus into silicon generates large numbers of crystal defects. The defects were successfully analyzed as dislocations.

Government Reports Annual Index

Government Reports Annual Index PDF Author:
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ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1312

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Ceramic Abstracts

Ceramic Abstracts PDF Author: American Ceramic Society
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Category : Ceramics
Languages : en
Pages : 1000

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