Author: Atsuo Iida
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Direct Observation of Local Layer Structure Defects in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-ray Micro-diffraction
Author: Atsuo Iida
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Characterization of the Local Layer Structure of a Broad Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-ray Micro-diffraction
Author: A. Iida
Publisher:
ISBN:
Category :
Languages : en
Pages : 31
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 31
Book Description
JJAP
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 1236
Book Description
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 1236
Book Description
Japanese Journal of Applied Physics
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1002
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1002
Book Description
Photon Factory Activity Report
Author: Kē-enerugī Butsurigaku Kenkyūjo (Japan). Hōshakō Jikken Shisetsu
Publisher:
ISBN:
Category : Photon factories
Languages : en
Pages : 630
Book Description
Publisher:
ISBN:
Category : Photon factories
Languages : en
Pages : 630
Book Description
Microscopic X-Ray Fluorescence Analysis
Author: Koen H. A. Janssens
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 454
Book Description
Table of contents
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 454
Book Description
Table of contents
Techniques for the Direct Observation of Structure and Imperfections
Author: Rointan Framroze Bunshah
Publisher:
ISBN:
Category : Electronic data processing
Languages : en
Pages : 526
Book Description
Publisher:
ISBN:
Category : Electronic data processing
Languages : en
Pages : 526
Book Description
X-ray Diffraction Microscopy of Imperfections in Semiconductor Crystals
Author: G. H. Schwuttke
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 140
Book Description
Three techniques have been perfected: (1) highintensity x-ray diffraction microscopy by extinction contrast, (2) x-ray diffraction microscopy through scanning oscillator technique, and (3) direct observation of imperfections in semiconductor crystals through anomalous transmission of x-rays. In type I diamonds, long-range strain fields were found to be the dominating imperfection, and dislocations appeared to be closely related to strain centers. Type II diamonds showed a much higher density of edge dislocations with Burgers vectors in (111) planes. The investigations on silicon led to the detection of several new crystal defects not previously known to occur in silicon. It was found that silicon crystals of zero dislocations may contain microstrains and large-area stacking faults. Epitaxial silicon layers were extensively investigated. Defect structures on epitaxial silicon were identified as stacking faults. X-ray diffraction microscopy of shallow-diffused junctions in silicon led to the discovery that diffusion of boron or phosphorus into silicon generates large numbers of crystal defects. The defects were successfully analyzed as dislocations.
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 140
Book Description
Three techniques have been perfected: (1) highintensity x-ray diffraction microscopy by extinction contrast, (2) x-ray diffraction microscopy through scanning oscillator technique, and (3) direct observation of imperfections in semiconductor crystals through anomalous transmission of x-rays. In type I diamonds, long-range strain fields were found to be the dominating imperfection, and dislocations appeared to be closely related to strain centers. Type II diamonds showed a much higher density of edge dislocations with Burgers vectors in (111) planes. The investigations on silicon led to the detection of several new crystal defects not previously known to occur in silicon. It was found that silicon crystals of zero dislocations may contain microstrains and large-area stacking faults. Epitaxial silicon layers were extensively investigated. Defect structures on epitaxial silicon were identified as stacking faults. X-ray diffraction microscopy of shallow-diffused junctions in silicon led to the discovery that diffusion of boron or phosphorus into silicon generates large numbers of crystal defects. The defects were successfully analyzed as dislocations.
Government Reports Annual Index
Author:
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1312
Book Description
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1312
Book Description
Ceramic Abstracts
Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000
Book Description
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000
Book Description