Digital Logic Design Based on Negative Capacitance Field Effect Transistors PDF Download
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Author: Mark Steiner
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
This thesis explores the circuit implications of ferroelectric transistors with a focus on the effects of ferroelectric material thickness. Ferroelectric transistors have a thin layer of ferroelectric material deposited on the gate of the device. This material causes the behavior of the device to change due to its negative capacitance. While there are many variables which contribute to this effect, with all other variables fixed, the material thickness can be used to explore some of the actions of the ferroelectric transistors.This thesis shows transistor characteristics of the ferroelectric transistors mapped with respect to the ferroelectric material thickness. A ring oscillator is also used to explore the energy and delay of the ferroelectric transistors. Also, 6T SRAM cells are explored with respect to ferroelectric transistors to understand the implications of their use within SRAM cells. Ferroelectric transistors are found to be useful in low power systems to mitigate some of the issues that traditional MOSFETs encounter when in the same setting.
Author: Mark Steiner
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
This thesis explores the circuit implications of ferroelectric transistors with a focus on the effects of ferroelectric material thickness. Ferroelectric transistors have a thin layer of ferroelectric material deposited on the gate of the device. This material causes the behavior of the device to change due to its negative capacitance. While there are many variables which contribute to this effect, with all other variables fixed, the material thickness can be used to explore some of the actions of the ferroelectric transistors.This thesis shows transistor characteristics of the ferroelectric transistors mapped with respect to the ferroelectric material thickness. A ring oscillator is also used to explore the energy and delay of the ferroelectric transistors. Also, 6T SRAM cells are explored with respect to ferroelectric transistors to understand the implications of their use within SRAM cells. Ferroelectric transistors are found to be useful in low power systems to mitigate some of the issues that traditional MOSFETs encounter when in the same setting.
Author: Young Suh Song
Publisher: CRC Press
ISBN: 1000933326
Category : Technology & Engineering
Languages : en
Pages : 149
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Book Description
This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Author: Young Suh Song
Publisher:
ISBN: 9781032446844
Category : Capacitors
Languages : en
Pages : 0
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Book Description
This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. . Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign.
Author: Zhi Cheng Jason Yuan
Publisher:
ISBN:
Category : Ferroelectricity
Languages : en
Pages : 0
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Book Description
As transistors scale to ever smaller dimensions, power density becomes an increasingly important issue in integrated circuit (IC) design. Recently, negative capacitance field-effect transistors (NCFETs), realized by stacking ferroelectric material on top of conventional gate oxides, have been proposed to reduce power consumption in modern aggressively scaled devices. The negative capacitance of these ferroelectric materials provide voltage amplification to the transistor in order to reduce the subthreshold swing (SS), which would reduce the active power consumption of the device via a reduction of the supply voltage. Beyond reduction of power consumption for individual transistors, the unique negative capacitance behavior in these ferroelectric materials also offers a vast array of options in modern IC design. As a result, ferroelectric materials are an exciting area of research. The current state-of-the-art modeling approach for the dynamics of ferroelectric materials is via the Landau-Khalatnikov (LK) equation. In this work, we implement a multi-domain improvement upon the LK equation and combine it with Cadence circuit simulations to model and predict the characteristics of NCFETs and other ferroelectric devices. In the first stage of this work, we calibrate our multi-domain LK model to experimental results to show a very strong match. Using this calibrated model, we examine the potential speed limitations of NCFETs and identify the requirement on the viscosity parameter of the ferroelectric materials to provide sub-picosecond rise time required for modern transistors. In the second stage, we propose a new measurement technique for extracting the LK parameters of a ferroelectric material. We demonstrate via Cadence circuit simulation that this new measurement technique is able to accurately extract all LK parameters, including the viscosity parameter, which is difficult to extract using standard techniques. In the third stage, we propose a new application for ferroelectric materials to increase the unity-current-gain frequency ?? of a transistor. By placing the ferroelectric in parallel with the FET gate, the negative capacitance of the ferroelectric cancels the positive gate capacitance of the FET, which in turn increases the ?? . This new application offerroelectrics opens new possibilities for IC design. Overall, this work improves the understanding of ferroelectric materials pertaining to their applications in IC design, providing critical information for the electron device community as it continues to explore methods to advance the performance of nanoscale electronics into the 2030s and beyond, the current horizon of the International Roadmap for Devices and Systems.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Debaprasad Das
Publisher: LAP Lambert Academic Publishing
ISBN: 9783847317166
Category :
Languages : en
Pages : 80
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Book Description
This book presents the design of digital logic circuits using carbon nanotube field effect transistors (CNTFET). CNTFET is a promising device in the nanometer regime which utilizes a semiconducting carbon nanotube (CNT) channel between the source and drain terminals. Due to the excellent electrical properties of CNT it can offer very high speed integrated circuits. Starting with the basics of CNT and CNTFET this book discusses the modeling of CNTFET using Verilog-AMS language. The design of the basic logic gates is presented. The designs are simulated to verify their functionality and extract the speed and power performances. The design of reconfigurable logic circuits using transmission gate based logic is also presented. A ring oscillator circuit has been designed using CNTFET and it is found that the circuit can operate at very high frequency of 114 GHz.
Author: Siliconix Incorporated
Publisher: McGraw-Hill Companies
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
Author: Evelyn Tina Breyer
Publisher: BoD – Books on Demand
ISBN: 3755708523
Category : Technology & Engineering
Languages : en
Pages : 216
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Book Description
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
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Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: Sangeeta Singh
Publisher: Springer Nature
ISBN: 981974623X
Category :
Languages : en
Pages : 331
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