Author: D. Misra
Publisher: The Electrochemical Society
ISBN: 9781566773461
Category : Science
Languages : en
Pages : 450
Book Description
"Papers presented at the First International Symposium on Science and Technology of Dielectrics in Emerging Fields, held from 27th April to 2nd May, 2003 in Paris, France"--Pref.
Dielectrics in Emerging Technologies
Author: D. Misra
Publisher: The Electrochemical Society
ISBN: 9781566773461
Category : Science
Languages : en
Pages : 450
Book Description
"Papers presented at the First International Symposium on Science and Technology of Dielectrics in Emerging Fields, held from 27th April to 2nd May, 2003 in Paris, France"--Pref.
Publisher: The Electrochemical Society
ISBN: 9781566773461
Category : Science
Languages : en
Pages : 450
Book Description
"Papers presented at the First International Symposium on Science and Technology of Dielectrics in Emerging Fields, held from 27th April to 2nd May, 2003 in Paris, France"--Pref.
Dielectric Elastomers as Electromechanical Transducers
Author: Federico Carpi
Publisher: Elsevier
ISBN: 0080557724
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
Dielectric Elastomers as Electromechanical Transducers provides a comprehensive and updated insight into dielectric elastomers; one of the most promising classes of polymer-based smart materials and technologies. This technology can be used in a very broad range of applications, from robotics and automation to the biomedical field. The need for improved transducer performance has resulted in considerable efforts towards the development of devices relying on materials with intrinsic transduction properties. These materials, often termed as "smart or "intelligent, include improved piezoelectrics and magnetostrictive or shape-memory materials. Emerging electromechanical transduction technologies, based on so-called ElectroActive Polymers (EAP), have gained considerable attention. EAP offer the potential for performance exceeding other smart materials, while retaining the cost and versatility inherent to polymer materials. Within the EAP family, "dielectric elastomers, are of particular interest as they show good overall performance, simplicity of structure and robustness. Dielectric elastomer transducers are rapidly emerging as high-performance "pseudo-muscular actuators, useful for different kinds of tasks. Further, in addition to actuation, dielectric elastomers have also been shown to offer unique possibilities for improved generator and sensing devices. Dielectric elastomer transduction is enabling an enormous range of new applications that were precluded to any other EAP or smart-material technology until recently. This book provides a comprehensive and updated insight into dielectric elastomer transduction, covering all its fundamental aspects. The book deals with transduction principles, basic materials properties, design of efficient device architectures, material and device modelling, along with applications. - Concise and comprehensive treatment for practitioners and academics - Guides the reader through the latest developments in electroactive-polymer-based technology - Designed for ease of use with sections on fundamentals, materials, devices, models and applications
Publisher: Elsevier
ISBN: 0080557724
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
Dielectric Elastomers as Electromechanical Transducers provides a comprehensive and updated insight into dielectric elastomers; one of the most promising classes of polymer-based smart materials and technologies. This technology can be used in a very broad range of applications, from robotics and automation to the biomedical field. The need for improved transducer performance has resulted in considerable efforts towards the development of devices relying on materials with intrinsic transduction properties. These materials, often termed as "smart or "intelligent, include improved piezoelectrics and magnetostrictive or shape-memory materials. Emerging electromechanical transduction technologies, based on so-called ElectroActive Polymers (EAP), have gained considerable attention. EAP offer the potential for performance exceeding other smart materials, while retaining the cost and versatility inherent to polymer materials. Within the EAP family, "dielectric elastomers, are of particular interest as they show good overall performance, simplicity of structure and robustness. Dielectric elastomer transducers are rapidly emerging as high-performance "pseudo-muscular actuators, useful for different kinds of tasks. Further, in addition to actuation, dielectric elastomers have also been shown to offer unique possibilities for improved generator and sensing devices. Dielectric elastomer transduction is enabling an enormous range of new applications that were precluded to any other EAP or smart-material technology until recently. This book provides a comprehensive and updated insight into dielectric elastomer transduction, covering all its fundamental aspects. The book deals with transduction principles, basic materials properties, design of efficient device architectures, material and device modelling, along with applications. - Concise and comprehensive treatment for practitioners and academics - Guides the reader through the latest developments in electroactive-polymer-based technology - Designed for ease of use with sections on fundamentals, materials, devices, models and applications
Interlayer Dielectrics for Semiconductor Technologies
Author: Shyam P Muraka
Publisher: Elsevier
ISBN: 0080521959
Category : Science
Languages : en
Pages : 459
Book Description
Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package.* Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume* written by renowned experts in the field* Provides an up-to-date starting point in this young research field.
Publisher: Elsevier
ISBN: 0080521959
Category : Science
Languages : en
Pages : 459
Book Description
Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package.* Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume* written by renowned experts in the field* Provides an up-to-date starting point in this young research field.
Defects in SiO2 and Related Dielectrics: Science and Technology
Author: Gianfranco Pacchioni
Publisher: Springer Science & Business Media
ISBN: 9780792366850
Category : Medical
Languages : en
Pages : 636
Book Description
Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000
Publisher: Springer Science & Business Media
ISBN: 9780792366850
Category : Medical
Languages : en
Pages : 636
Book Description
Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000
Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566777925
Category : Dielectrics
Languages : en
Pages : 588
Book Description
Publisher: The Electrochemical Society
ISBN: 1566777925
Category : Dielectrics
Languages : en
Pages : 588
Book Description
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Author: R. Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566777100
Category : Dielectric films
Languages : en
Pages : 871
Book Description
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Publisher: The Electrochemical Society
ISBN: 1566777100
Category : Dielectric films
Languages : en
Pages : 871
Book Description
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566778654
Category : Science
Languages : en
Pages : 950
Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Publisher: The Electrochemical Society
ISBN: 1566778654
Category : Science
Languages : en
Pages : 950
Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Materials Fundamentals of Gate Dielectrics
Author: Alexander A. Demkov
Publisher: Springer
ISBN: 9789048167869
Category : Science
Languages : en
Pages : 0
Book Description
This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy. Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given.
Publisher: Springer
ISBN: 9789048167869
Category : Science
Languages : en
Pages : 0
Book Description
This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy. Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given.
High Dielectric Constant Materials
Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Proceedings of the Sixth International Symposium on Dielectric Materials and Applications (ISyDMA’6)
Author: Ashok Vaseashta
Publisher: Springer Nature
ISBN: 3031113977
Category : Science
Languages : en
Pages : 279
Book Description
This book addresses to the materials scientists, physicists, chemists, biologists, and electrical engineers engaged in fundamental and applied research or technical investigations on such materials. The goal of the International Symposium on Dielectric Materials and Applications conference series is to provide an innovative platform for key researchers, scientists from all over the world to exchange ideas and to hold wide ranging discussions on recent developments in dielectric materials and their new and emerging applications. The aim of ISyDMA meeting is to provide an international forum for the discussion of current research on high k-dielectric, electrical insulation, dielectric phenomena, and topics related to emerging applications.
Publisher: Springer Nature
ISBN: 3031113977
Category : Science
Languages : en
Pages : 279
Book Description
This book addresses to the materials scientists, physicists, chemists, biologists, and electrical engineers engaged in fundamental and applied research or technical investigations on such materials. The goal of the International Symposium on Dielectric Materials and Applications conference series is to provide an innovative platform for key researchers, scientists from all over the world to exchange ideas and to hold wide ranging discussions on recent developments in dielectric materials and their new and emerging applications. The aim of ISyDMA meeting is to provide an international forum for the discussion of current research on high k-dielectric, electrical insulation, dielectric phenomena, and topics related to emerging applications.