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Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 3030045137
Category : Technology & Engineering
Languages : en
Pages : 125
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Book Description
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 3030045137
Category : Technology & Engineering
Languages : en
Pages : 125
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Book Description
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Author: Tahir Iqbal Awan
Publisher: Elsevier
ISBN: 0128189096
Category : Science
Languages : en
Pages : 338
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Book Description
Chemistry of Nanomaterials: Fundamentals and Applications provides a foundational introduction to this chemistry. Beginning with an introduction to the field of nanoscience and technology, the book goes on to outline a whole range of important effects, interactions and properties. Tools used to assess such properties are discussed, followed by chapters putting this fundamental knowledge in context by providing examples of nanomaterials and their applications in the real world. Drawing on the experience of its expert authors, this book is an accessible introduction to the interactions at play in nanomaterials for both upper-level students and researchers. - Highlights the foundational chemical interactions at play in nanomaterials - Provides accessible insight for readers across multidisciplinary fields - Places nanomaterial chemistry in the context of the broader field of nanoscale research
Author: George Gibbs
Publisher:
ISBN: 9781681176437
Category :
Languages : en
Pages : 284
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Book Description
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author: Peter James George
Publisher:
ISBN:
Category :
Languages : en
Pages : 556
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Book Description
Author: Yue Fu
Publisher: CRC Press
ISBN: 1466583835
Category : Technology & Engineering
Languages : en
Pages : 358
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Book Description
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Author:
Publisher: ASM International
ISBN: 9780871702852
Category : Technology & Engineering
Languages : en
Pages : 1234
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Book Description
Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1132
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Book Description
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1434
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Book Description
Author: B Jayant Baliga
Publisher: World Scientific
ISBN: 9814478946
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
