Designing Chemical Approaches for Organic Modification of Silicon Surfaces and Thermal Dry Etching of Cobalt Thin Films PDF Download
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Author: Jing Zhao
Publisher:
ISBN: 9780355734959
Category :
Languages : en
Pages : 116
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Book Description
Silicon and metal surfaces modified with organic molecule precursors are of great importance to the semiconductor and electronics industries. However, it is always a challenge to choose the most efficient precursors for forming a monolayer with surfaces and to investigate the chemical changes on surfaces by controlling critical conditions, such as surface temperature. In order to obtain a better understanding of the reactions between organic molecules and surfaces, we combined experimental results including infrared spectroscopy (IR), temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and microscopic studies together with density functional theory (DFT) studies. For silicon surface studies, we focused on determining the reaction step that plays the key role in halide precursors sticking probabilities and the influence of temperature on the formed monolayer. For metal surface studies, we focused on the etching method to control the layer thickness of thin metal films. ☐ During the process of achieving a halide-terminated Si (100) surface in ultrahigh vacuum (UHV), we compared the sticking probabilities of ethyl-chloride and ethyl-iodide reacting with a clean Si (100) surface using TPD and DFT studies. It has been demonstrated that the weakly bound precursor states of ethyl-halide on surfaces determines the sticking probabilities during adsorption. At the same time, we applied multivariate curve resolution (MCR), a mathematical method to simplify interpreting the complex TPD spectra resulting from the low sticking probability of ethyl-chloride adsorbing on silicon surfaces. ☐ In addition to halide-terminated Si (100) surfaces, amine-terminated Si (100) surfaces are reactive and potential for further modification. We studied the adsorption of triethylenediamine (TEDA) on a clean Si (100) surface as well as the adsorbents while varying temperature. The experimental techniques including IR, TPD, XPS and angular dependent near-edge X-Ray adsorption fine structure (NEXAFS) were supplemented by DFT calculations. We concluded that the adsorption process can be controlled by temperature: a datively bonded TEDA-Si-Si complex forms on the surface at room temperature as well as at cryogenic temperature with low exposure; heating above 400 K leads to C-N dissociation and ultimately the formation of surface nitride and carbide species. ☐ A thermal dry etching process of cobalt thin films was investigated using 1, 1, 1, 5, 5, 5 -hexafluoro-2, 4-pentanedione (hfacH). The chemical species resulting from thermal treatment were studied by IR, TPD, and XPS. The topography and morphology of the surfaces were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results indicated that the etching of cobalt can occur Hhfac, but not with halogens.
Author: Jing Zhao
Publisher:
ISBN: 9780355734959
Category :
Languages : en
Pages : 116
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Book Description
Silicon and metal surfaces modified with organic molecule precursors are of great importance to the semiconductor and electronics industries. However, it is always a challenge to choose the most efficient precursors for forming a monolayer with surfaces and to investigate the chemical changes on surfaces by controlling critical conditions, such as surface temperature. In order to obtain a better understanding of the reactions between organic molecules and surfaces, we combined experimental results including infrared spectroscopy (IR), temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and microscopic studies together with density functional theory (DFT) studies. For silicon surface studies, we focused on determining the reaction step that plays the key role in halide precursors sticking probabilities and the influence of temperature on the formed monolayer. For metal surface studies, we focused on the etching method to control the layer thickness of thin metal films. ☐ During the process of achieving a halide-terminated Si (100) surface in ultrahigh vacuum (UHV), we compared the sticking probabilities of ethyl-chloride and ethyl-iodide reacting with a clean Si (100) surface using TPD and DFT studies. It has been demonstrated that the weakly bound precursor states of ethyl-halide on surfaces determines the sticking probabilities during adsorption. At the same time, we applied multivariate curve resolution (MCR), a mathematical method to simplify interpreting the complex TPD spectra resulting from the low sticking probability of ethyl-chloride adsorbing on silicon surfaces. ☐ In addition to halide-terminated Si (100) surfaces, amine-terminated Si (100) surfaces are reactive and potential for further modification. We studied the adsorption of triethylenediamine (TEDA) on a clean Si (100) surface as well as the adsorbents while varying temperature. The experimental techniques including IR, TPD, XPS and angular dependent near-edge X-Ray adsorption fine structure (NEXAFS) were supplemented by DFT calculations. We concluded that the adsorption process can be controlled by temperature: a datively bonded TEDA-Si-Si complex forms on the surface at room temperature as well as at cryogenic temperature with low exposure; heating above 400 K leads to C-N dissociation and ultimately the formation of surface nitride and carbide species. ☐ A thermal dry etching process of cobalt thin films was investigated using 1, 1, 1, 5, 5, 5 -hexafluoro-2, 4-pentanedione (hfacH). The chemical species resulting from thermal treatment were studied by IR, TPD, and XPS. The topography and morphology of the surfaces were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results indicated that the etching of cobalt can occur Hhfac, but not with halogens.
Author: Juan Carlos F. Rodriguez-Reyes
Publisher:
ISBN: 9781124242019
Category : Amines
Languages : en
Pages :
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Book Description
The physical-chemical properties of several interfacial systems of technological relevance are investigated, having as a common goal the elucidation of strategies towards their atomic- and molecular-level control. Such systems can be classified in three groups: (i) ultra-thin films deposited using metalorganic precursors, (ii) metalorganic monolayers on silicon, and (iii) amine-functionalized silicon surfaces. Experimental, theoretical and chemometric methods are conveniently combined to gain a solid understanding of these systems. The ultra-thin films under investigation are titanium carbonitride (TiNC) and hafnium oxide (HfO 2). Since these films may serve as substrates for deposition of other materials in circuit components, their surface chemistry needs to be understood and controlled in order to facilitate further deposition steps. The surface of a TiCN film is transformed to titanium nitride (TiN) through nitridation with ammonia; this compositional change can be reversed by the partial decomposition of ethylene molecules on the surface. The surface reactivity is observed to depend on the film composition, and therefore the method described above serves to reversibly tune the reactivity of Ti-based films. As for HfO 2 films, it is found that the deposition temperature affects the degree of crystallinity of the films, which in turn affects their surface chemistry. Thus, together with a control of the composition, it is found that the reactivity of a film can be controlled precisely by controlling the crystallinity. The investigation of metalorganic monolayers on silicon surfaces was motivated by the need for understanding the first steps of metalorganic-based deposition of films, which is usually characterized by a heavy presence of contaminants that degrade the film properties. Through a combination of vibrational (infrared) spectroscopy and theoretical methods, a feasible pathway for the adsorption and decomposition of Ti[N(CH 3) 2] 4 is found. This pathway starts with the ligand-mediated attachment of the precursor (through a N atom), followed by dissociation of a metal-ligand bond. In addition, the C-H bond is broken, possibly forming Si-C bonds and causing carbon incorporation. This model is found to be rather robust and to adequately describe other types of metalorganic precursors. It allows establishing a generalized model able to explain the success or failure of a metalorganic precursor chemistry for film deposition. Finally, amine-functionalized silicon surfaces are considered as prototypical systems where the spatial distribution of adsorbates and the control over the reactivity of surface sites can be investigated. The spatial distribution of molecules is investigated at the atomic level by considering the saturation of a Si(100) surface with NH 3 . It is found that the distribution of (Si)NH 2 species can be controlled thermally and, more importantly, that during thermal decomposition N inserts into the substrate in manners that minimize the arising strain. When the surface is covered with NH 3 or with organic amines, its chemical behavior is determined by the basicity of the molecule functionalizing the surface. The precise tuning of the reactivity (basicity) of surface sites opens the doors for highly controllable, selective reactions. Although these results are obtained from rather fundamental grounds, their interpretation is often translated into manners in which technological applications can be improved. Further directions worth exploring emanated from this work are outlined and discussed. Ultimately, this work intends to highlight the current importance of surface physical chemistry in the continuous development of modern society through the improvement of its technology.
Author: E.F. Vansant
Publisher: Elsevier
ISBN: 0080528953
Category : Science
Languages : en
Pages : 573
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Book Description
Oxide surface materials are widely used in many applications, in particular where chemically modified oxide surfaces are involved. Indeed, in disciplines such as separation, catalysis, bioengineering, electronics, ceramics, etc., modified oxide surfaces are very important. In all cases, the knowledge of their chemical and surface characteristics is of great importance for the understanding and eventual improvement of their performances. This book reviews the latest techniques and procedures in the characterization and chemical modification of the silica surface, presenting a unified and state-of-the-art approach to the relevant analysis techniques and modification procedures, covering 1000 references integrated into one clear concept.
Author: A.J. van Roosmalen
Publisher: Springer Science & Business Media
ISBN: 148992566X
Category : Science
Languages : en
Pages : 247
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Book Description
This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
Author: R.A. Powell
Publisher: Elsevier
ISBN: 0080983588
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Author: Babasaheb R. Sankapal
Publisher: Springer Nature
ISBN: 9819909619
Category : Science
Languages : en
Pages : 590
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Book Description
This book explores chemical methods for thin film deposition with diverse nanostructured morphology and their applications. Unlike top-down techniques, chemical methods offer low cost, simplicity, and growth of nanostructured surface architecture with ease of small to large-scale area deposition. The book primarily focuses on innovative twelve chemical methods for thin-film deposition on one platform. Since each method has its own advantages and disadvantages, it is crucial to select the specific method for specific material to be deposited depending upon what type of application is targeted. Due to inclusive of diverse chemical deposition methods, researcher will have knowledge about best choice of the deposition method to be adopted. Inclusive methods discussed in the book are chemical bath deposition, successive ionic layer adsorption and reaction, ion exchange, electroless deposition, electrodeposition, hydrothermal, spray pyrolysis, spin coating, dip coating, doctor blade, screen printing, and sol-gel. The selection of the correct procedure for material to be deposited in thin film form depends on its unique process parameters based on the kind of application and its requirement. The role of preparative factors necessary for thin film alters properties related to structure and surface morphology, electrical conductivity and optical band gap which have been extensively discussed along with the underlying science of film synthesis. The book provides a comprehensive overview of the field of chemical methods for thin film synthesis to applications. In addition to synthesis, the book covers characterization, instrumentation, and industrial application of thin films. As a result, concentrated techniques will be of great interest to university/college professors, students and new engineers as well as postdocs and scientists in the area.
Author: Eimutis Juzeliunas
Publisher: John Wiley & Sons
ISBN: 3527348972
Category : Science
Languages : en
Pages : 293
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Book Description
The expert reference on sustainable and energy-efficient production of photovoltaic-grade silicon materials Electrochemical methods, in particular molten-salt approaches, are a cost-effective, energy-efficient, and highly sustainable approach for producing solar-grade silicon. Surface micro- and nanostructuring methods for effective light harvesting, silicon electrorefining in molten salts, electrodeposition of photoresponsive films, and other related processes are likely to replace conventional carbothermic production methods. Silicon: Electrochemistry, Production, Purification and Applications presents an up-to-date summary of recent experimental and technological developments in the field, highlighting sustainable and energy-efficient processes for high-grade silicon production for a variety of photovoltaic and energy applications. Presented in a logical and concise format, this authoritative volume details the fundamental properties and technical processes of metal-grade silicon production and describes the various electrochemical methods for high-grade silicon production. Topics include silicon surface modification, chemical-physical structuring, porous and black silicon, electrochemical Si surface structuring and anodizing in molten salts, and more. Reviews the sustainable and energy-efficient production and purification of photovoltaic-grade silicon materials Summarizes recent progress in sustainable processes for high-grade silicon production Describes electrochemical methods for silicon production such as electrolysis, electrodeposition, and electrorefining Concludes with a discussion of future challenges and opportunities Written by a leading researcher in the field, Silicon: Electrochemistry, Production, Purification and Applications is a valuable resource for chemists and material scientists in academia and industry, particularly those working in sustainable energy development, photovoltaics, light harvesting efficiency, solar-to-chemical conversion, and production of solar-grade silicon, batteries, photoelectrodes, or silicon-based semiconductors.
Author: Perrin Walker
Publisher: CRC Press
ISBN: 9781439822531
Category : Science
Languages : en
Pages : 1434
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Book Description
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
Author: Theodor Schneller
Publisher: Springer Science & Business Media
ISBN: 3211993118
Category : Technology & Engineering
Languages : en
Pages : 801
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Book Description
This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.
Author: Robert Bertram Heimann
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 250
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Book Description
In the first contribution to this volume we read that the world-wide production of single crystal silicon amounts to some 2000 metric tons per year. Given the size of present-day silicon-crystals, this number is equivalent to 100000 silicon-crystals grown every year by either the Czochralski (80%) or the floating-zone (20%) technique. But, to the best of my knowledge, no coherent and comprehensive article has been written that deals with "the art and science", as well as the practical and technical aspects of growing silicon crystals by the Czochralski technique. The same could be said about the floating-zone technique were it not for the review article by W. Dietze, W. Keller and A. Miihlbauer which was published in the preceding Volume 5 ("Silicon") of this series (and for a monograph by two of the above authors published about the same time). As editor of this volume I am very glad to have succeeded in persuading two scien tists, W. Zulehner and D. Huber, of Wacker-Chemitronic GmbH - the world's largest producer of silicon-crystals - to write a comprehensive article about the practical and scientific aspects of growing silicon-crystals by the Czochralski method and about silicon wafer manufacture. I am sure that many scientists or engineers who work with silicon crystals -be it in the laboratory or in a production environment - will profit from the first article in this volume.
