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Author: Li Gao
Publisher:
ISBN:
Category :
Languages : en
Pages : 179
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Book Description
With the development of wireless communications, high data rate is becoming essential since it not only augments the current wireless systems but also enables many emerging applications. In order to achieve multi-gigabit-per-second data rates, the fifth generation communication system (5G) is moving forward to the millimeter-wave band, such as 24-29 GHz and 37-42 GHz. Since the frequency is more than 10 times than the current communication protocols, the wavelength is 10 times smaller, which makes the transmission line effects more notable and increases the design complexity. Moreover, the path loss is much larger and therefore a higher output power or antenna EIRP (effective isotropic radiated power) is required to overcome this loss. Previous millimeter-wave 5G research focused on narrow band, such as 28 GHz and 39 GHz. But if a single system can be wideband and include all of these bands, the simultaneous data rate can be increased and the system cost can be reduced. The research projects in this dissertation, in consequence, focus on different wideband RF ICs, and include power amplifiers (PA), low noise amplifiers (LNA), wideband phased-array receivers with high single-sideband rejection, wideband IQ receivers and wideband front-end circuits including phase-shifters and variable gain amplifiers. All of these circuits were done in advanced CMOS SOI technologies. The thesis concludes with a list of future work to be done in this area.
Author: Li Gao
Publisher:
ISBN:
Category :
Languages : en
Pages : 179
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Book Description
With the development of wireless communications, high data rate is becoming essential since it not only augments the current wireless systems but also enables many emerging applications. In order to achieve multi-gigabit-per-second data rates, the fifth generation communication system (5G) is moving forward to the millimeter-wave band, such as 24-29 GHz and 37-42 GHz. Since the frequency is more than 10 times than the current communication protocols, the wavelength is 10 times smaller, which makes the transmission line effects more notable and increases the design complexity. Moreover, the path loss is much larger and therefore a higher output power or antenna EIRP (effective isotropic radiated power) is required to overcome this loss. Previous millimeter-wave 5G research focused on narrow band, such as 28 GHz and 39 GHz. But if a single system can be wideband and include all of these bands, the simultaneous data rate can be increased and the system cost can be reduced. The research projects in this dissertation, in consequence, focus on different wideband RF ICs, and include power amplifiers (PA), low noise amplifiers (LNA), wideband phased-array receivers with high single-sideband rejection, wideband IQ receivers and wideband front-end circuits including phase-shifters and variable gain amplifiers. All of these circuits were done in advanced CMOS SOI technologies. The thesis concludes with a list of future work to be done in this area.
Author: Ivan Chee-Hong Lai
Publisher: Springer Science & Business Media
ISBN: 1402069995
Category : Technology & Engineering
Languages : en
Pages : 185
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Book Description
Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers describes in detail some of the interesting developments in CMOS millimetre-wave circuit design. This includes the re-emergence of the slow-wave technique used on passive devices, the license-free 60GHz band circuit blocks and a 76GHz voltage-controlled oscillator suitable for vehicular radar applications. All circuit solutions described are suitable for digital CMOS technology. Digital CMOS technology developments driven by Moore’s law make it an inevitable solution for low cost and high volume products in the marketplace. Explosion of the consumer wireless applications further makes this subject a hot topic of the day. The book begins with a brief history of millimetre-wave research and how the silicon transistor is born. Originally meant for different purposes, the two technologies converged and found its way into advanced chip designs. The second part of the book describes the most important passive devices used in millimetre-wave CMOS circuits. Part three uses these passive devices and builds circuit blocks for the wireless transceiver. The book completes with a comprehensive list of references for further readings. Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers is useful to show the analogue IC designer the issues involved in making the leap to millimetre-wave circuit designs. The graduate student and researcher can also use it as a starting point to understand the subject or proceed to innovative from the works described herein.
Author: Yang Yang
Publisher:
ISBN:
Category :
Languages : en
Pages : 105
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Book Description
With the CMOS process technology progress, transistor can achieve up to 260 GHz ft and fmax referenced to the top metal, it makes possible to develop lower cost circuits and blocks for THz high speed implementations such as active imagine system, short distance chip to chip communication systems and large scale high speed ultra low power switch networks. The dissertation shows an 8x1 phased array transmitter working at 370-410 GHz with peak EIRP of 8.5 dBm, a QPSK modulated 20 Gbit/s transceiver front end (including modulator, voltage control oscillator, power splitter, doubler, mixer and wide-band baseband amplifier.) at 155 GHz and two cross connected high peed ultra low power switch matrices (an 8x8 matrix up to 25 Gbit/s matrix and a 16x16 matrix built using four 8x8 matrix). All circuits and blocks are built using the Global Foundries 45 nm CMOS SOI (silicon on isotropic) process.
Author: Yi-Fan Tsao
Publisher: Cuvillier Verlag
ISBN: 3736967020
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues. To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-μm GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems.
Author: David del Rio
Publisher: Springer
ISBN: 3319932810
Category : Technology & Engineering
Languages : en
Pages : 269
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Book Description
This book presents design methods and considerations for digitally-assisted wideband millimeter-wave transmitters. It addresses comprehensively both RF design and digital implementation simultaneously, in order to design energy- and cost-efficient high-performance transmitters for mm-wave high-speed communications. It covers the complete design flow, from link budget assessment to the transistor-level design of different RF front-end blocks, such as mixers and power amplifiers, presenting different alternatives and discussing the existing trade-offs. The authors also analyze the effect of the imperfections of these blocks in the overall performance, while describing techniques to correct and compensate for them digitally. Well-known techniques are revisited, and some new ones are described, giving examples of their applications and proving them in real integrated circuits.
Author: Eric A. Juntunen
Publisher:
ISBN:
Category : Metal oxide semiconductors, Complementary
Languages : en
Pages :
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Book Description
This dissertation presents the design and implementation of circuits and transceivers in CMOS technology to enable many new millimeter-wave applications. A simple approach is presented for accurately modeling the millimeter-wave characteristics of transistors that are not fully captured by contemporary parasitic extraction techniques. Next, the integration of a low-power 60-GHz CMOS on-off keying (OOK) receiver in 90-nm CMOS for use in multi-gigabit per second wireless communications is demonstrated. The use of non-coherent OOK demodulation by a novel demodulator enabled a data throughput of 3.5 Gbps and resulted in the lowest power budget (31pJ/bit) for integrated 60-GHz CMOS OOK receivers at the time of publication. Also presented is the design of a high-power, high-efficiency 45-GHz VCO in 45-nm SOI CMOS. The design is a class-E power amplifier placed in a positive feedback configuration. This circuit achieves the highest reported output power (8.2 dBm) and efficiency (15.64%) to date for monolithic silicon-based millimeter-wave VCOs. Results are provided for the standalone VCO as well as after packaging in a liquid crystal polymer (LCP) substrate. In addition, a high-power high-efficiency (5.2 dBm/6.1%) injection locked oscillator is presented. Finally, the design of a 2-channel 45-GHz vector modulator in 45-nm SOI CMOS for LINC transmitters is presented. A zero-power passive IQ generation network and a low-power Gilbert cell modulator are used to enable continuous 360° vector generation. The IC is packaged with a Wilkinson power combiner on LCP and driven by external DACs to demonstrate the first ever 16-QAM generated by outphasing modulation in CMOS in the Q-band.
Author: Noël Deferm
Publisher: Springer
ISBN: 3319139517
Category : Technology & Engineering
Languages : en
Pages : 188
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Book Description
This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.
Author: Domenico Pepe
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
The research activity carried out during this PhD consists on the design of radio- frequency integrated circuits, for ultra-wideband (UWB) and millimeter-wave sys- tems, and covers the following topics: (i) radio-frequency integrated circuits for low-power transceivers for wireless local networks; (ii) fully integrated UWB radar for cardio-pulmonary monitoring in 90nm CMOS technology; (iii) 60-GHz low noise amplifer (LNA) in 65nm CMOS technology.
Author: Shinwon Kang
Publisher:
ISBN:
Category :
Languages : en
Pages : 143
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Book Description
Millimeter-wave and sub-terahertz frequency bands are available for wideband applications such as high data-rate communication systems. As the respective wavelength is on the order of a millimeter, a compact on-chip antenna can be designed, thereby reducing the overall form factor and obviating expensive off-chip packaging. However, the channel propagation loss increases significantly with the frequency. Although CMOS technology is prevalent in digital processing and data communication, CMOS devices are lossy and inefficient at such high frequencies. Thus, it is challenging to implement an efficient and wideband transceiver at sub-terahertz frequencies using CMOS technology. The aim of this dissertation is to demonstrate sub-terahertz wireless links for high-speed chip-to-chip communication in CMOS. First, transceiver architectures and building blocks are discussed to address the challenges and limitations of the CMOS process. Two fully integrated CMOS transceivers, a 260 GHz OOK transceiver and a 240 GHz QPSK/BPSK transceiver, are then demonstrated using on-chip antennas. Frequency multiplication and mixer-first design are employed to operate beyond the cut-off frequency. In the QPSK modulation, a maximum data rate of 16 Gbps is realized with an energy efficiency of 30 pJ/bit. These demonstrations show that millimeter-wave/sub-terahertz wireless communication can be a promising solution for high-speed chip-to-chip communication. Improvements in the energy efficiency and silicon area of these wireless links can result in replacing or complementing existing wired links.
Author: Joseph Lee Baylon
Publisher:
ISBN:
Category : Broadband communication systems
Languages : en
Pages : 230
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Book Description
To meet the ever-increasing demands of computational power, multi-core processor integration has risen to new heights. The wireless network-on-chip is an emerging technology which seeks to augment inter-core interconnects on multi-core processors with high throughput, low power wireless interconnects. While this technology offers improvements in power and latency for on-chip communication networks, additional innovation is required to realize these system level benefits. To meet the speed, efficiency, and latency demands of the wireless network-on-chip architecture, highly efficient, wideband mmWave transceivers and sub-blocks must be designed.This thesis presents the design and analysis of mmWave transceiver sub-blocks as well as integrated transmitter and receiver systems. Two high-performance signal source circuits suitable for the requirements of the multi-band wireless network-on-chip architecture are presented. The first simultaneously provides multiple harmonically related outputs for non-overlapping frequency bands of a multi-band wireless network architecture. The signal source circuit consists of a 28 GHz voltage-controlled oscillator circuit which leverages transformer feedback for high output swing and low phase noise under a low voltage power supply and an efficient harmonic generation architecture. The second signal source leverages a phase-switched dual-mode inductor which presents different inductance under different phase excitation. In addition, a V-band receiver is presented which leverages a current re-use active feed-forward and feedback architecture for wide bandwidth demodulation and minimal power overhead. Additionally, the inductorless bandwidth extension technique reduces silicon area overhead. A W-band receiver is also proposed which leverages a dual-noise-matched active gain-boosted common-gate LNA architecture which provides wide input matching with reduced power overhead. Finally, a W-band transmitter based on a wideband direct-modulated on-off-keying oscillator is presented. Resonant pulse-generation is used to increase the initial energy across the resonant tank, dramatically reducing start-up time. Furthermore, dual active- and passive- Gm-boosting and adaptive amplitude control for reduced start-up time and decreased steady-state power consumption further improve the bandwidth of the direct modulation oscillator.The circuits described above were fabricated in a 65 nm CMOS technology and demonstrate state-of-the-art performance with low power consumption and low area overhead. The innovations in this work facilitate the low-power mmWave transceivers required for the multi-band WiNoC architecture.
