Design, Fabrication, Characterization, and Modeling of Novel Ultra Low Power Heterodimensional Field Effect Transistors PDF Download
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Author: Michael J. Hurt
Publisher:
ISBN:
Category :
Languages : en
Pages : 456
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Book Description
Author: Michael J. Hurt
Publisher:
ISBN:
Category :
Languages : en
Pages : 456
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Book Description
Author: Faisal Azam
Publisher:
ISBN:
Category :
Languages : en
Pages : 58
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Author: Ioannis Kymissis
Publisher: Springer Science & Business Media
ISBN: 0387921346
Category : Technology & Engineering
Languages : en
Pages : 156
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Book Description
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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The primary objective of this Phase I project was to determine the extent of the significant reduction in power consumption of integrated circuits which may be achieved by utilizing a novel sidegate FET technology. The new FET technology eliminates the Narrow Channel Effect (NCE) which is one of the primary factors limiting the minimum power consumption of integrated circuits. By eliminating the NCE, we may scale the device size dramatically and reduce the power-delay product by at least an order of magnitude compared to existing transistor technologies. Additionally, the new FET has two gates which can therefore lead to a significant reduction in the transistor count of ICs, as was demonstrated in a simple NOR gate using only two transistors. Finally, the transistor technology is compatible with fiFET circuits for microwave/digital applications. In this Phase I project, the design, fabrication, characterization and modeling of the new transistor was investigated and issues concerning manufacturability were discussed.
Author: Terry E. McMahon
Publisher:
ISBN:
Category : Modulation-doped field-effect transistors
Languages : en
Pages : 152
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Author: Alison Joy Tessmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
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Author: James David Werking
Publisher:
ISBN:
Category :
Languages : en
Pages : 212
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Author: Pavan Vidyadhar Muzumdar
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 114
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Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 806
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Author: Sk. Fahad Chowdhury
Publisher:
ISBN:
Category :
Languages : en
Pages : 178
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Book Description
The field of two-dimensional layered materials has witnessed extensive research activities during the past decade, which commenced with the seminal work of isolating graphene from bulk graphite. In addition to providing a rich playground for scientific experiments, graphene has soon become a material of technological interest for many of its fascinating electrical, thermal, mechanical and optical properties. The controllability of carrier density with electric field in graphene, along with very high carrier mobility and saturation velocity, has motivated the use of graphene channel in field-effect devices. Also, the two-dimensional layered materials family has grown very rapidly with the application of the graphene exfoliation technique and many of these elemental and compound materials are considered useful for transistor applications. In this work, various aspects of the use of two-dimensional layered materials for transistor applications were analyzed. Starting with material synthesis, field-effect transistors (FETs) were designed, fabricated and tested for their DC and high frequency performances. Through the detailed electrical and spectroscopic investigations of several processing techniques for enhanced FET performance, numerous insights were obtained into the FET operation and performance bottlenecks. The reduction of charged impurity scattering in graphene FET by Hexamethyldisilazane interaction improved field-effect mobility and reduced residual carrier concentration. This technique was also shown to be promising for other two-dimensional materials based FET. A useful technique for reducing the thickness of black phosphorus flake with oxygen plasma etching was developed. Both back-gated and top-gated FETs were implemented with good performances. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy revealed vital structural information about layered black phosphorus. Lastly, these exotic materials based FETs were characterized for their high frequency performance, resulting in gigahertz range transit frequency and operated in a variety of important circuit configurations such as frequency multiplier, amplifier, mixer and AM demodulator.
