Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors PDF Download
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Author: Martin W. Dvorak
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 356
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Author: Martin W. Dvorak
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 356
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Author: James C. Vlcek
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Author: Nick Gengming Tao
Publisher:
ISBN:
Category : Bipolar transisitors
Languages : en
Pages : 318
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In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Author: Urs Hammer
Publisher:
ISBN: 9783866283015
Category : Bipolar transistors
Languages : en
Pages : 265
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Author: 廖育資
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Ravi Sridhara
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ISBN:
Category :
Languages : en
Pages : 612
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Author: Benjamin Chu-Kung
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ISBN:
Category :
Languages : en
Pages : 56
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.
Author: Hong Yang
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 133
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Author: I-Ning Ku
Publisher:
ISBN:
Category :
Languages : en
Pages : 96
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