Author: Bo-Kang Lai
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Design and Fabrication of RF Power AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
Author: Bo-Kang Lai
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Design and Fabrication of RF AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrates
Author: Chung-Wang Su
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Investigation and Fabrication of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Transistors with Surface Treatment and the I-ZnO Gate Dielectric Layer
Author: 邱雅蘭
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Author: Michael Hosch
Publisher: Cuvillier Verlag
ISBN: 3736938446
Category : Technology & Engineering
Languages : en
Pages : 129
Book Description
This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Publisher: Cuvillier Verlag
ISBN: 3736938446
Category : Technology & Engineering
Languages : en
Pages : 129
Book Description
This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications
Author: Anthony Calzolaro
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Normally-off AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with RF-Sputtered Hafnium Oxide
Author: 楊富鈞
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Fabrication and Investigation of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Field-effect Transistors with Gate Insulators Grown Using PEC Oxidation Method
Author: 黃立賢
Publisher:
ISBN:
Category :
Languages : en
Pages : 102
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 102
Book Description
Handbook for III-V High Electron Mobility Transistor Technologies
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Design and Fabrication of AlGaN/GaN High Current Density Fin Structure High-Electron-Mobility-Transistors
Author: Tun-Hsiang Chang
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
GaN Transistor Modeling for RF and Power Electronics
Author: Yogesh Singh Chauhan
Publisher: Elsevier
ISBN: 0323999409
Category : Technology & Engineering
Languages : en
Pages : 262
Book Description
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Publisher: Elsevier
ISBN: 0323999409
Category : Technology & Engineering
Languages : en
Pages : 262
Book Description
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction