Author: Paul Marraffino
Publisher:
ISBN:
Category :
Languages : en
Pages : 205
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Book Description
The report describes work performed to develop a radiation-hardened MNOS memory array for use in a RAM memory of an airborne computer. A study of MNOS device operation led to the fabrication and test of several memory and fixed threshold transistors and 256-bit memory circuits. Environmental test data taken at three radiation simulation sources and under endurance stress is presented along with studies on circuit design, packaging, and system design.
Author: Calligaro, Cristiano
Publisher: River Publishers
ISBN: 8770220204
Category : Technology & Engineering
Languages : en
Pages : 418
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Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 312
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Book Description
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 412
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Book Description
Author: Cristiano Calligaro
Publisher: CRC Press
ISBN: 1000793060
Category : Technology & Engineering
Languages : en
Pages : 417
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Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1048
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Book Description
Author: Stephen Rogich
Publisher:
ISBN:
Category :
Languages : en
Pages : 73
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Book Description
This final report covers work performed in designing a CMOS/SOS memory subsystem based upon given specifications for a 256-bit memory chip. The subsystem interfaces with the Survivable MOS Array Computer (SMARC). Logic design and interconnection for the subsystem are presented herein. So too are the designs and specifications for the three chip types which satisfy all subsystem functions. In addition, the report presents estimates of the producibility and reliability for these chips for both conventional and hardened gate insulators. (Author).
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 988
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Book Description
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1390
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si3N4 insulator deposited at 750°C. Read cycle times less than 350 ns and write cycle times of 1 .mu.s are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected.
