Design and Fabrication of Quantum-dot Lasers PDF Download
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Author: Sheila P. Nabanja
Publisher:
ISBN:
Category :
Languages : en
Pages : 89
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Book Description
Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, high differential gain and highly temperature stable light-current characteristics. This thesis investigates the lasing characteristics of a ridge-waveguide laser containing seven layers of quantum dots as the active region. A summary of the electrical and optical performance data of the heterostructure quantum dot lasers, as well as previously fabricated quantum well lasers, is presented. The motivation of using InAs quantum dots in the active region is to produce near infrared emission for telecommunication applications.
Author: Sheila P. Nabanja
Publisher:
ISBN:
Category :
Languages : en
Pages : 89
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Book Description
Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, high differential gain and highly temperature stable light-current characteristics. This thesis investigates the lasing characteristics of a ridge-waveguide laser containing seven layers of quantum dots as the active region. A summary of the electrical and optical performance data of the heterostructure quantum dot lasers, as well as previously fabricated quantum well lasers, is presented. The motivation of using InAs quantum dots in the active region is to produce near infrared emission for telecommunication applications.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 30
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Book Description
The authors have made significant progress both in the design and fabrication of Si-based laser device structures. They have demonstrated several key parts of the laser structure, including a SiGe waveguide with good optical and electrical properties for both light and carriers confinement. SiGe resonant cavity with Distributed Bragg Reflectors (DBRs) to serve as Si-based laser cavity was designed and fabricated, which may be the first SiGe-based resonant cavity with DBRs reported thus far. In addition, they have carried out theoretical calculations for coupled SAQD systems and formulated the distinct advantage of a coupled SAQD system for laser applications. In conjunction with ARO program DAAD19-01-1-0532, the authors have achieved good control over and the mapping of the parameter space for fabricating InAs quantum dots on Si substrate. They also have carried out detailed transmission electron microscopy (TEM) studies of individual dots and experimentally identified the critical dot size for dislocation under different growth conditions. The very small critical size of InAs SAQD for dislocation and the associated extreme quantum confinement show that there might not be a window in the dot size for which electron-hole pairs can be confined and the dots are coherently strained. Information is presented on the following topics: laser cavity fabrication and measurement; SiGe waveguide design and fabrication; distributed Bragg reflector (DBR) laser cavities; coupling effect on the laser performance; III-V quantum dots on Si(001); fabrication of InAs SAQDs on Si(001); growth mode of III-V on IV substrate; first-principles calculations of different InAs overlayers on Si(001); critical size of threading dislocation-free dots at different growth conditions; InAs growth on relaxed SiGe buffer layer; and high-resolution transmission electron microscopy study of InAs on Si(001).
Author: Victor Mikhailovich Ustinov
Publisher:
ISBN: 9780198526797
Category : Science
Languages : en
Pages : 306
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Book Description
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
Author: Tim David Germann
Publisher: Springer Science & Business Media
ISBN: 3642340792
Category : Technology & Engineering
Languages : en
Pages : 157
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Book Description
Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.
Author: Bjelica, Marko
Publisher: kassel university press GmbH
ISBN: 3737602840
Category :
Languages : en
Pages : 137
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Book Description
The quantization of the active laser medium has enabled numerous advances in fiber-optic communications, e.g., higher efficiency of laser diodes, higher modulation bandwidth, lower spectral linewidth of the emitted signal. In recent years the quantum dot lasers have demonstrated a strong potential to continue this trend, therefore, by progressing from standard quantum well to quantum dot designs, it can be expected that the quantum dot lasers will play an increasingly important role in future fiber-optic communications. The research work presented in this dissertation seeks to further develop the quantum dot laser designs and improve the understanding of complex operating conditions affecting the laser linewidth. This is achieved by developing a comprehensive laser simulator, that was applied to design and simulation of edge-emitting lasers and laser arrays. As a result, the optimized laser diodes have demonstrated a significantly lower linewidth compared to equivalent quantum well designs. Due to their narrow linewidth, the realized photonic devices can be a viable solution for high bit rate fiber-optic networks.
Author: Hilmi Volkan Demir
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453
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Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
Author: Mehmet Ali Tasci
Publisher:
ISBN:
Category :
Languages : en
Pages : 96
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Book Description
Author: Junjie Hu
Publisher:
ISBN: 9781321090604
Category : Electronic books
Languages : en
Pages : 256
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 17
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Book Description
Since the first demonstration of room-temperature operation of self-assembled quantum dot (QD) lasers about a decade ago, there have been great strides in improving the characteristics and performance of these lasers. They currently match or surpass the performance of quantum well lasers. However, there are unique problems that limit the performance of conventional separate confinement heterostructure (SCH) QD lasers compared to what is expected from "ideal" lasers with near singular density of states. In the study reported here, unique insights and solutions to these problems are demonstrated and reliable quantum dot lasers that surpass quantum well lasers in performance characteristics are developed. By utilizing the concepts of tunnel injection and p-doping, 1.0 micrometer and 1.3 micrometer quantum dot lasers with high differential gain, modulation bandwidth ^25GHz, a factor less than unity, and zero chirp have been achieved. This final report summarizes the successful design, fabrication, and characterization of high performance 1.0 micrometer QD-Distributed-Feedback (DFB) lasers, 1.0 micrometer QD-Tunnel-Injection lasers (undoped and p-doped), and 1.3 micrometer p-doped QD lasers. The authors have demonstrated record performance of these unique devices in terms of differential gain, modulation bandwidth, temperature dependence, chirp, and linewidth enhancement factor. (16 figures, 14 refs.).
Author: Edik U. Rafailov
Publisher: John Wiley & Sons
ISBN: 3527634495
Category : Science
Languages : en
Pages : 243
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Book Description
In this monograph, the authors address the physics and engineering together with the latest achievements of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices. Their approach encompasses a broad range of laser systems, while taking into consideration not only the physical and experimental aspects but also the much needed modeling tools, thus providing a holistic understanding of this hot topic.
