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Author: Woongje Sung
Publisher:
ISBN:
Category :
Languages : en
Pages : 177
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Author: Woongje Sung
Publisher:
ISBN:
Category :
Languages : en
Pages : 177
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Author: Lei Lin
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 106
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Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
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Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author: Mihaela Alexandru
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300oC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300oC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300oC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.
Author: Maurizio Di Paolo Emilio
Publisher: Springer Nature
ISBN: 3031634187
Category :
Languages : en
Pages : 317
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Author: Kazuhiro Mochizuki
Publisher: Artech House
ISBN: 1630814296
Category : Technology & Engineering
Languages : en
Pages : 284
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Book Description
This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.
Author: Petre Alexandrov
Publisher:
ISBN:
Category : High voltages
Languages : en
Pages : 139
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4H-SiC is a promising material for switching high power and high temperature device applications. The superior properties of SiC, such as wider band-gap and higher value of critical electric field allow significant reduction in device on-resistance compared to Si power devices of similar voltage ratings. In addition the excellent thermal conductivity of SiC alleviates the device cooling requirements and allows design of smaller and more efficient systems. Several advantages of the unipolar power switches over the bipolar switches make them desirable for fast switching applications. Voltage-controlled normally-off devices are particularly attractive for practical applications because of simpler gate-drive circuitry. The advantages of the vertical JFET device being free of the problems related to oxide reliability, as compared to the MOSFET, recognize it as an excellent candidate for high power, high temperature switching applications. Device designs for normally-off and normally-on unipolar switches with blocking voltages from 400V to 11kV are proposed, based on a pure vertical trenched and implanted structure. Two different junction termination structures (junction termination extension and guard rings) are designed and successfully implemented. A fabrication process is designed to achieve a simple and reliable self-aligned fabrication process. The fabrication challenges are discussed and ways to improve the process are identified. Three different devices were designed and fabricated. The world's first normally-off 4H-SiC TIVJFET with a blocking voltage of 11kV was demonstrated, showing low specific on-resistance of 124mOhm.cm2. Normally-off and normally-on 4H-SiC High Frequency TIVJFETs with blocking voltages up to 400V were demonstrated. 3.3A-397V normally-off capability was achieved for a single die, corresponding to a high power of 1310 W/die. This corresponds to a class B operation RF power of 164W for a single die. Cut-off frequency fT= 0.9 to 1.5 GHz was reached. In the 1200V class devices a normally-on 4H-SiC TIVJFET with guard ring termination and substantially simplified processing was also demonstrated. The highest blocking voltage achieved was 1562V with a specific on-resistance of 2.8mOhm.cm2 at VDS=0.5V and VGS=2.5V and a current gain of 1495. The lowest specific on resistance achieved was 2.2mOhm.cm2 at VDS=0.5V and VGS=2.5V with a current gain of 1454 and a blocking voltage of 1232V.
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465
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Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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The overall goal of this thesis is to design and fabricate optically activated Silicon Carbide high-power switching devices. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the ElectroMagnetic Interference (EMI) problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. Silicon Carbide is a wide-band gap semiconductor, which offers the potential to overcome both the temperature and voltage blocking limitations of Silicon, due to its high thermal conductivity, high electric breakdown field, high saturated electron drift velocity and a lower intrinsic carrier concentration. In the first part of the thesis 6H-SiC was chosen as the power device material and devices were designed, fabricated and tested. Observations made from this attempt were utilized to recommend revisions in the second attempt. In the second part, 4H-SiC was chosen due to its higher mobility along the vertical axis as compared to 6H-SiC, which makes it preferable as a material for vertical power devices. Besides, many of the electrical properties of 4H-SiC are isotropic in nature. The fabricated device would eventually be integrated into a motor drive current module supplied to the Air Force. Hence it was designed to support a 135 V drive potential and source 150 A current. The fabrication processes for the 4H-SiC devices were discussed. The devices were electrically characterized and inferences were drawn from the results. Finally after discussing both electrical testing and fabrication procedures, optimization techniques were suggested for future attempts.
Author: Xueqing Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 334
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