DEPSCOR Molecular Beam Epitaxy of Low Temperature Non-Stoichiometric III-V Compounds: Theoretical Modeling and Simulation PDF Download
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Book Description
Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)Ga and AS(0)Ga in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of AS(+)Ga and AS(0)Ga concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Book Description
Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)Ga and AS(0)Ga in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of AS(+)Ga and AS(0)Ga concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)(sub Ga) and As(sup 0)(sub Ga) in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of As(+)(sub Ga) and As(sup 0)(sub Ga) concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.
Author: Andrew Holmes-Siedle
Publisher: OUP Oxford
ISBN: 9780198507338
Category : Science
Languages : en
Pages : 640
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Book Description
New edition of this practical and educational handbook for engineer-designers and other professionals. It describes the electronic technology of the new millennium and the complex physical and engineering problems that occur when such equipment is exposed to radiation. The authors have an accumulated joint combined experience in the field of about 75 years, giving a broader blend of experience than any existing book in the field.
Author: Marian A. Herman
Publisher: Springer Science & Business Media
ISBN: 3642800602
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.
Author: Brian R. Pamplin
Publisher: Elsevier
ISBN: 1483155331
Category : Science
Languages : en
Pages : 181
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Book Description
Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
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Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Author: Ramamurti Rajesh
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 218
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Book Description
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Jeffrey Y. Tsao
Publisher: Academic Press
ISBN: 0080571352
Category : Technology & Engineering
Languages : en
Pages : 324
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Book Description
The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.* Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy* Thorough enough to benefit molecular beam epitaxy researchers* Broad enough to benefit materials, surface, and device researchers* Referenes articles at the forefront of modern research as well as those of historical interest
Author: Burra Sidharth
Publisher: American Institute of Physics
ISBN: 9780735405394
Category : Science
Languages : en
Pages : 0
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Book Description
The 9th International Symposium “Frontiers of Fundamental and Computational Physics”, held in Udine and Trieste, Italy from 7-9 January 2008, aimed at providing a platform for a wide range of physicists to meet and share thoughts on the latest trends in various, mainly cross-disciplinary, research areas. This includes the exploration of frontier lines in High Energy Physics, Theoretical Physics, Gravitation and Cosmology, Astrophysics, Condensed Matter Physics, and Fluid Mechanics. Such frontier lines were unified by the use of computers as an, often primary, research instrument, or dealing with issues related to information theory. These proceedings contain contributions by Nobel Laureates D.D. Osheroff, H. Hroto, and A. Leggett, and concludes with a chapter on new approaches to Physics Teaching.
