Deposition and Characterization of Titanium Dioxide and Hafnium Dioxide Thin Films for High Dielectric Applications PDF Download
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Author: Meeyoung Yoon
Publisher:
ISBN:
Category : Titanium dioxide
Languages : en
Pages : 322
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Book Description
Author: Meeyoung Yoon
Publisher:
ISBN:
Category : Titanium dioxide
Languages : en
Pages : 322
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Book Description
Author: David Christopher Gilmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Book Description
Author: Polly Wanda Chu
Publisher:
ISBN:
Category :
Languages : en
Pages : 434
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Book Description
Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Author: Michel Houssa
Publisher: CRC Press
ISBN: 1000687244
Category : Science
Languages : en
Pages : 460
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Book Description
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author: Jermaine Maurice Bradley
Publisher:
ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 146
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Book Description
Investigates the structural and mechanical properties of pulsed laser deposited (PLD) titania (TiO2) thin films. Uses nano-indentation to determine the mechanical properties of the films as a function of the growth parameters.
Author: Harish Bhandari
Publisher:
ISBN: 9783838333885
Category :
Languages : en
Pages : 232
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Book Description
Author: Min Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 446
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Book Description
Author: Evgeni Gusev
Publisher: Springer Science & Business Media
ISBN: 1402043678
Category : Technology & Engineering
Languages : en
Pages : 495
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Book Description
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Author: Hafiz Muhammad Ali
Publisher: BoD – Books on Demand
ISBN: 1839694750
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book presents a comprehensive overview of titanium dioxide, including recent advances and applications. It focuses on the compound’s uses in environmental remediation, photocatalytic materials, rechargeable lithium-ion batteries, thin films, energy storage, semiconductors, and much more. This volume is a useful resource for researchers, scientists, engineers, and students.
Author: Filipe Vaz
Publisher: Bentham Science Publishers
ISBN: 1608051560
Category : Technology & Engineering
Languages : en
Pages : 363
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Book Description
Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through optoelectronics) to corrosion resistance. Developing a better understanding of the relationships between deposition processes, structure and composition of the deposited films is critical to the continued evolution of these applications. This e-book provides valuable information about the process modeling, fabrication and characterization of metallic oxynitride-based thin films produced by reactive sputtering and some related deposition processes. Its contents are spread in twelve main and concise chapters through which the book thoroughly reviews the bases of oxynitride thin film technology and deposition processes, sputtering processes and the resulting behaviors of these oxynitride thin films. More importantly, the solutions for the growth of oxynitride technology are given in detail with an emphasis on some particular compounds. This is a valuable resource for academic learners studying materials science and industrial coaters, who are concerned not only about fundamental aspects of oxynitride synthesis, but also by their innate material characteristics.
