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Author: J. Weber
Publisher: Elsevier Science
ISBN: 9780080436036
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The present volume contains most of the papers presented at the Symposium A 'Defects in Silicon: Hydrogen'. The symposium took place at the 1998 Spring Meeting of the European Materials Research Society from June 16-19 1998, Strasbourg, France, and was devoted to the fundamental aspects of hydrogen in crystalline silicon and their influence on silicon technology. The two-and-a-half day scientific program included 13 invited and 35 contributed papers.
Author: J. Weber
Publisher: Elsevier Science
ISBN: 9780080436036
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The present volume contains most of the papers presented at the Symposium A 'Defects in Silicon: Hydrogen'. The symposium took place at the 1998 Spring Meeting of the European Materials Research Society from June 16-19 1998, Strasbourg, France, and was devoted to the fundamental aspects of hydrogen in crystalline silicon and their influence on silicon technology. The two-and-a-half day scientific program included 13 invited and 35 contributed papers.
Author: Steffen Knack
Publisher:
ISBN: 9783832500849
Category :
Languages : en
Pages : 110
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Book Description
Author: Benjamin Hourahine
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Andrew Skumanich
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
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Book Description
Author: C.A.J. Ammerlaan
Publisher: Elsevier
ISBN: 0080983642
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655
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Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author: Jeffrey Lawrence Hastings
Publisher:
ISBN:
Category : Hydrogen
Languages : en
Pages : 86
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Book Description
Author: European Materials Research Society. Spring Meeting. Symposium A: Defects in Silicon: Hydrogen
Publisher:
ISBN:
Category :
Languages : en
Pages : 190
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Book Description
Author: James Cullen Carroll
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 218
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Author: Jayanta Kumar Rudra
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 196
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