Author: M. Suezawa
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 608
Book Description
The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Defects in Semiconductors Icds-18
Author: M. Suezawa
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 608
Book Description
The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 608
Book Description
The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Defects in Semiconductors, ICDS-19
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 648
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 648
Book Description
Proceedings of the 18th International Conference on Defects in Semiconductors
Author: Masashi Suezawa
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 666
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 666
Book Description
Defects in Semiconductors, ICDS-19
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 596
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 596
Book Description
Proceedings of the 15th International Conference on Defects in Semiconductors
Author: György Ferenczi
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 1026
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 1026
Book Description
Point and Extended Defects in Semiconductors
Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Diffusion and Defect Data
Author:
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 990
Book Description
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 990
Book Description
Proceedings of the Fourth International Symposium on High Purity Silicon
Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 9781566771566
Category : Science
Languages : en
Pages : 606
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771566
Category : Science
Languages : en
Pages : 606
Book Description
Crucial Issues in Semiconductor Materials and Processing Technologies
Author: S. Coffa
Publisher: Springer Science & Business Media
ISBN: 940112714X
Category : Technology & Engineering
Languages : en
Pages : 523
Book Description
Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.
Publisher: Springer Science & Business Media
ISBN: 940112714X
Category : Technology & Engineering
Languages : en
Pages : 523
Book Description
Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.
Proceedings of the 17th International Conference on Defects in Semiconductors
Author: Helmut Heinrich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 724
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 724
Book Description