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Author: Daniel M. Fleetwood
Publisher: CRC Press
ISBN: 1420043773
Category : Science
Languages : en
Pages : 772
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Book Description
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author: Daniel M. Fleetwood
Publisher: CRC Press
ISBN: 1420043773
Category : Science
Languages : en
Pages : 772
Get Book
Book Description
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author: Milton Ohring
Publisher: Academic Press
ISBN: 0080575528
Category : Technology & Engineering
Languages : en
Pages : 759
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Book Description
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Author: R.A. Levy
Publisher: Springer Science & Business Media
ISBN: 9400909179
Category : Technology & Engineering
Languages : en
Pages : 992
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Book Description
The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Author: C.R.M. Grovenor
Publisher: Routledge
ISBN: 1351431544
Category : Science
Languages : en
Pages : 557
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Book Description
This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Author: C.R.M. Grovenor
Publisher: Routledge
ISBN: 1351431536
Category : Science
Languages : en
Pages : 549
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Book Description
This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Tomasz Brozek
Publisher: CRC Press
ISBN: 1351831348
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Author: S. Ashok
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 522
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Book Description
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Author: David Redfield
Publisher: Cambridge University Press
ISBN: 9780521024457
Category : Science
Languages : en
Pages : 232
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Book Description
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Author: Alex Hansen
Publisher: Frontiers Media SA
ISBN: 2889637093
Category :
Languages : en
Pages : 186
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Book Description
Frontiers in Physics – FPHY – is now in its eighth year. Up to last year, the journal received a slowly increasing trickle of manuscripts, and then during the summer… Boom! The number of manuscripts we receive started increasing exponentially. This is of course a signal to us who are associated with the journal that we are on the right track to build a first-rate journal spanning the entire field of physics. And it is not the only signal. We also see it in other indicators such as the number of views and downloads, Impact Factor and the Cite Score. Should we be surprised at this increase? If I were to describe FPHY in one word, it would be “innovation”. Attaching the names of the reviewers that have endorsed publication permanently to the published paper is certainly in this class. It ensures that the reviewers are accountable; furthermore, the level of transparency this implies ensures that any conflict of interest is detected at the very beginning of the process. The review process itself is innovative. After an initial review that proceeds traditionally, the reviewers and authors enter a back-and-forth dialog that irons out any misunderstanding. The reviewers retain their anonymity throughout the process. The entire review process and any question concerning editorial decisions is fully in the hands of active scientists. The Frontiers staff is not allowed to make any such decision. They oversee the process and make sure that the manuscript and the process leading to publication or rejection upholds the standard. FPHY is of course a gold open access journal. This is the only scientific publication model that is compatible with the information revolution. A journal’s prestige is traditionally associated with how difficult it is to publish there. Exclusivity as criterion for desirability, is a mechanism we know very well from the consumer market. However, is this criterion appropriate for scientific publishing? It is almost by definition not possible to predict the importance of a new idea – otherwise it would not have been new. So, why should journals make decisions on publishing based on predicting the possible importance of a given work. This can only be properly assessed after publication. Frontiers has removed “importance” from the list of criteria for publication. That the work is new, is another matter: the work must be new and scientifically correct. It would seem that removing the criterion of “importance” would be a risky one, but it turns out not to be. The Specialty Chief Editors who lead the 18 sections that constitute FPHY, have made this selection of papers published in FPHY in 2019. We have chosen the papers that we have found most striking. Even though this is far from a random selection, they do give a good idea of what PFHY is about. Enjoy! We certainly did while making this selection. Professor Alex Hansen (Field Chief Editor)
