Deep-submicron process technology PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Deep-submicron process technology PDF full book. Access full book title Deep-submicron process technology by Stanley Wolf. Download full books in PDF and EPUB format.
Author: Stanley Wolf
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages :
Get Book Here
Book Description
Author: Stanley Wolf
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages :
Get Book Here
Book Description
Author: Stanley Wolf
Publisher:
ISBN: 9780961672171
Category :
Languages : en
Pages : 806
Get Book Here
Book Description
Author: W. Nebel
Publisher: Springer Science & Business Media
ISBN: 1461556856
Category : Technology & Engineering
Languages : en
Pages : 582
Get Book Here
Book Description
Low Power Design in Deep Submicron Electronics deals with the different aspects of low power design for deep submicron electronics at all levels of abstraction from system level to circuit level and technology. Its objective is to guide industrial and academic engineers and researchers in the selection of methods, technologies and tools and to provide a baseline for further developments. Furthermore the book has been written to serve as a textbook for postgraduate student courses. In order to achieve both goals, it is structured into different chapters each of which addresses a different phase of the design, a particular level of abstraction, a unique design style or technology. These design-related chapters are amended by motivations in Chapter 2, which presents visions both of future low power applications and technology advancements, and by some advanced case studies in Chapter 9. From the Foreword: `... This global nature of design for low power was well understood by Wolfgang Nebel and Jean Mermet when organizing the NATO workshop which is the origin of the book. They invited the best experts in the field to cover all aspects of low power design. As a result the chapters in this book are covering deep-submicron CMOS digital system design for low power in a systematic way from process technology all the way up to software design and embedded software systems. Low Power Design in Deep Submicron Electronics is an excellent guide for the practicing engineer, the researcher and the student interested in this crucial aspect of actual CMOS design. It contains about a thousand references to all aspects of the recent five years of feverish activity in this exciting aspect of design.' Hugo de Man Professor, K.U. Leuven, Belgium Senior Research Fellow, IMEC, Belgium
Author: Stanley Wolf
Publisher:
ISBN: 9780961672133
Category : Integrated circuits
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Amir Zjajo
Publisher: Springer Science & Business Media
ISBN: 9400777817
Category : Technology & Engineering
Languages : en
Pages : 207
Get Book Here
Book Description
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
Author: Chun Meng Lek
Publisher:
ISBN:
Category :
Languages : en
Pages : 258
Get Book Here
Book Description
Author: Robert Bogdan Staszewski
Publisher: John Wiley & Sons
ISBN: 0470041943
Category : Technology & Engineering
Languages : en
Pages : 281
Get Book Here
Book Description
A new and innovative paradigm for RF frequency synthesis and wireless transmitter design Learn the techniques for designing and implementing an all-digital RF frequency synthesizer. In contrast to traditional RF techniques, this innovative book sets forth digitally intensive design techniques that lead the way to the development of low-cost, low-power, and highly integrated circuits for RF functions in deep submicron CMOS processes. Furthermore, the authors demonstrate how the architecture enables readers to integrate an RF front-end with the digital back-end onto a single silicon die using standard ASIC design flow. Taking a bottom-up approach that progressively builds skills and knowledge, the book begins with an introduction to basic concepts of frequency synthesis and then guides the reader through an all-digital RF frequency synthesizer design: Chapter 2 presents a digitally controlled oscillator (DCO), which is the foundation of a novel architecture, and introduces a time-domain model used for analysis and VHDL simulation Chapter 3 adds a hierarchical layer of arithmetic abstraction to the DCO that makes it easier to operate algorithmically Chapter 4 builds a phase correction mechanism around the DCO such that the system's frequency drift or wander performance matches that of the stable external frequency reference Chapter 5 presents an application of the all-digital RF synthesizer Chapter 6 describes the behavioral modeling and simulation methodology used in design The final chapter presents the implementation of a full transmitter and experimental results. The novel ideas presented here have been implemented and proven in two high-volume, commercial single-chip radios developed at Texas Instruments: Bluetooth and GSM. While the focus of the book is on RF frequency synthesizer design, the techniques can be applied to the design of other digitally assisted analog circuits as well. This book is a must-read for students and engineers who want to learn a new paradigm for RF frequency synthesis and wireless transmitter design using digitally intensive design techniques.
![Development of a Deep-submicron CMOS Process for Fabrication of High Performance 0.25 Um [micron] Transistors PDF](https://books.google.com/books/content/images/frontcover/idE6OAAACAAJ?fife=w80-h100)
Author: Michael V. Aquilino
Publisher:
ISBN:
Category : Metal oxide semiconductors, Complementary
Languages : en
Pages : 292
Get Book Here
Book Description
"An advanced process for fabrication of 0.25 um CMOS transistors has been demonstrated. This process is designed for transistors with Lpoly = 0.25 um and Leffective = 0.2 um on 150 mm (6") silicon wafers. Devices with Leffective of 0.2 um and smaller have been tested and found operational. A 0.25 um NMOS transistor with drain current of 177 uA/um at VG=VD=2.5 V and a PMOS transistor with drain current of 177 uA/um at VG=VD=2.5 V are reported. The threshold voltages are 1.0 V for the NMOS and -0.135 V for the PMOS transistors. These 0.25 um NMOS and PMOS are the smallest transistors ever fabricated at RIT. Many processes have been integrated to produce the final CMOS devices, including: 50 Å gate oxide with N2), shallow trench isolation by chemical mechanical planarization (CMP), dual doped polysilicon gates for surface channel devices, ultra-shallow low doped source/drain extensions using low energy As and BF2 ions, rapid thermal dopant activation, Si3N4 sidewall spacers, TiSi2 salicide source/drain contacts and gates, uniformly doped twin wells, contact cut RIE and 2 level aluminum metalization"--Abstract.
Author: Philip E. Madrid
Publisher: Addison Wesley Publishing Company
ISBN:
Category : Integrated circuits
Languages : en
Pages : 54
Get Book Here
Book Description
Author: Chuan Seng Tan
Publisher: Springer Science & Business Media
ISBN: 0387765344
Category : Technology & Engineering
Languages : en
Pages : 365
Get Book Here
Book Description
This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.
